FTA1241 Todos los transistores

SEMICONDUCTOR FTA1241 TECHNICAL DATA FTA1241 TRANSISTOR (PNP) B FEATURES Low Collector Saturation Voltage High Power Dissipation E DIM MILLIMETERS A 8.2 MAX D MAXIMUM RATINGS (Ta=25 unless otherwise noted) B 5.1 MAX C 1.58 MAX D 0.55 MAX Symbol Parameter Value Unit E 0.7 TYP F 1.27 TYP G 2.54 TYP VCBO Collector-Base Voltage -35 V F H 14.20 MAX G J 0.45 MAX

SEMICONDUCTOR FTA1274 TECHNICAL DATA TO 92L FTA1274 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Complementary to FTC3227 3. BASE General Purpose Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current

SEMICONDUCTOR FTA1271 TECHNICAL DATA General Purpose Transistor B C PNP Silicon FEATURE DIM MILLIMETERS High DC Current Gain A 4.70 MAX E B 4.80 MAX G Complementary to KTC3203 C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H Symbo Parameter Value Unit J 14.00 + 0.50 L 2.30 F F VCBO Collector-Base Voltage -

SEMICONDUCTOR FTA1298 TECHNICAL DATA General Purpose Transistors LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain hFE=100 320. Low Saturation Voltage 3 VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). Suitable for Driver Stage of Small Motor. 2 Complementary to FTC3265. 1 Small Package. SOT 23 MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR FTA1220/A TECHNICAL DATA D FTA1220/1220A TRANSISTOR (PNP) A E C F G DIM MILLIMETERS FEATURES B A 8.3 MAX B 11 3 0.3 C .15 TYP Audio frequency power amplifier 1 2 3 D 3.2 0.2 E 2.0 0.2 H F 2.8 0.1 High frequency power amplifier I G 3.2 0.1 H 1.27 0.1 K I 1. 0 0.1 Complement to FTC2690/FTC2690A K 15.5 0.2 L 0.76 0.1 M 2.28 TYP L

SEMICONDUCTOR FTA1266 TECHNICAL DATA TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application Complementary to FTC3198. DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00 F 1.27 G 0.85 Symbo Parameter Value Unit H 0.45 _ H VCBO Collector-Base Voltage -60 V J 14.00 + 0.50 L 2.30 F

SEMICONDUCTOR FTA1268 TECHNICAL DATA B C DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE TO-92 2013. 08. 05 Revision No 0 1/2 A J C L M FTA1268 2013. 08. 05 Revision No 0 2/2

SEMICONDUCTOR FTA1275 TECHNICAL DATA B FTA1275 TRANSISTOR (PNP) E DIM MILLIMETERS FEATURES A 8.2 MAX D B 5.1 MAX High Voltage C 1.58 MAX D 0.55 MAX Large Continuous Collector Current Capability E 0.7 TYP F 1.27 TYP G 2.54 TYP Complementary to FTC3228 F H 14.20 MAX G J 0.45 MAX L 4.10 MAX C 1. EMITTER L 1 2 3 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS

SEMICONDUCTOR FTA1270 TECHNICAL DATA General Purpose Transistor B C PNP Silicon FEATURE DIM MILLIMETERS Complementary NPN Type available (FTC3202) A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 MAXIMUM RATINGS (TA=25 unless otherwise noted) H 0.45 _ H J 14.00 + 0.50 Symbol Parameter Value Units L 2.30 F F M 0.51 MAX VCBO Collector-Base V