FTA1661
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTA1661
Código: DY_OD
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120
MHz
Capacitancia de salida (Cc): 30
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar FTA1661
FTA1661
Datasheet (PDF)
..1. Size:100K first silicon
fta1661.pdf 
SEMICONDUCTORFTA1661TECHNICAL DATAACHPNP TransistorGFEATURES DDK Small Flat Package F FDIM MILLIMETERS High Current Application A 4.70 MAX_+B 2.50 0.20 High Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-8
8.1. Size:102K first silicon
fta1662.pdf
SEMICONDUCTORFTA1662TECHNICAL DATAFEATURES AComplementary to FTC4374 CHGMAXIMUM RATINGS (TA=25 unless otherwise noted) DDSymbol Parameter Value UnitsKVCBO Collector-Base Voltage -80 V F FDIM MILLIMETERSA 4.70 MAXVCEO Collector-Emitter Voltage -80 V _+B 2.50 0.20C 1.70 MAXVEBO Emitter-Base Voltage -5 V 1 2 3D 0.45+0.15/-0.10E 4.25 MAXIC Colle
8.2. Size:1051K first silicon
fta1666.pdf
SEMICONDUCTORFTA1666TECHNICAL DATAACHGFTA1666 TRANSISTOR (PNP) D DKFEATURES F FDIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX_+B 2.50 0.20C 1.70 MAX Small Flat Package 1 2 3D 0.45+0.15/-0.10E 4.25 MAX Low Saturation Voltage _+F 1.50 0.10G 0.40 TYP1. BASE Power Amplifier and Switching Application H 1.7 MAX2. COLLECTORJ 0.7 MIN
8.3. Size:328K first silicon
fta1664.pdf
SEMICONDUCTORFTA1664TECHNICAL DATAACHGFTA1664 TRANSISTOR (PNP) FEATURES DDK Complementary to FTC4376 F FDIM MILLIMETERS Small Flat Package A 4.70 MAX_+B 2.50 0.20 High Current Application C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-89MAX
8.4. Size:140K first silicon
fta1663.pdf
SEMICONDUCTORFTA1663TECHNICAL DATAPNP TransistorAFEATURES CH High current applications G Complementary to FTC4375 DDMAXIMUM RATINGS (TA=25 unless otherwise noted)KF FDIM MILLIMETERSSymbol Parameter Value UnitsA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage -30 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage -30 V E 4.25 MAX
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
