FTA1666 Todos los transistores

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FTA1666 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FTA1666

Código: WO_WY

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 120 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: SOT89

Búsqueda de reemplazo de transistor bipolar FTA1666

 

FTA1666 Datasheet (PDF)

1.1. fta1666.pdf Size:1051K _first_silicon

FTA1666
FTA1666

SEMICONDUCTOR FTA1666 TECHNICAL DATA A C H G FTA1666 TRANSISTOR (PNP) D D K FEATURES F F DIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX Small Flat Package 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX Low Saturation Voltage _ + F 1.50 0.10 G 0.40 TYP 1. BASE Power Amplifier and Switching Application H 1.7 MAX 2. COLLECTOR J 0.7 MIN

4.1. fta1662.pdf Size:102K _first_silicon

FTA1666
FTA1666

SEMICONDUCTOR FTA1662 TECHNICAL DATA FEATURES A Complementary to FTC4374 C H G MAXIMUM RATINGS (TA=25 unless otherwise noted) D D Symbol Parameter Value Units K VCBO Collector-Base Voltage -80 V F F DIM MILLIMETERS A 4.70 MAX VCEO Collector-Emitter Voltage -80 V _ + B 2.50 0.20 C 1.70 MAX VEBO Emitter-Base Voltage -5 V 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX IC Colle

4.2. fta1664.pdf Size:328K _first_silicon

FTA1666
FTA1666

SEMICONDUCTOR FTA1664 TECHNICAL DATA A C H G FTA1664 TRANSISTOR (PNP) FEATURES D D K Complementary to FTC4376 F F DIM MILLIMETERS Small Flat Package A 4.70 MAX _ + B 2.50 0.20 High Current Application C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-89 MAX

4.3. fta1663.pdf Size:140K _first_silicon

FTA1666
FTA1666

SEMICONDUCTOR FTA1663 TECHNICAL DATA PNP Transistor A FEATURES C H High current applications G Complementary to FTC4375 D D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) K F F DIM MILLIMETERS Symbol Parameter Value Units A 4.70 MAX _ + B 2.50 0.20 VCBO Collector-Base Voltage -30 V C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

4.4. fta1661.pdf Size:100K _first_silicon

FTA1666

SEMICONDUCTOR FTA1661 TECHNICAL DATA A C H PNP Transistor G FEATURES D D K Small Flat Package F F DIM MILLIMETERS High Current Application A 4.70 MAX _ + B 2.50 0.20 High Voltage C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-8

Otros transistores... FTA1298 , FTA1505 , FTA1576 , FTA1659A , FTA1661 , FTA1662 , FTA1663 , FTA1664 , BD679 , FTA1774 , FTA1943 , FTA708 , FTA719 , FTA720 , FTA733B , FTA8550H , FTA916 .

 


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