FTA1666 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTORFTA1666TECHNICAL DATAACHGFTA1666 TRANSISTOR (PNP) D DKFEATURES F FDIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX_+B 2.50 0.20C 1.70 MAX Small Flat Package 1 2 3D 0.45+0.15/-0.10E 4.25 MAX Low Saturation Voltage _+F 1.50 0.10G 0.40 TYP1. BASE Power Amplifier and Switching Application H 1.7 MAX2. COLLECTORJ 0.7 MIN

SEMICONDUCTORFTA1662TECHNICAL DATAFEATURES AComplementary to FTC4374 CHGMAXIMUM RATINGS (TA=25 unless otherwise noted) DDSymbol Parameter Value UnitsKVCBO Collector-Base Voltage -80 V F FDIM MILLIMETERSA 4.70 MAXVCEO Collector-Emitter Voltage -80 V _+B 2.50 0.20C 1.70 MAXVEBO Emitter-Base Voltage -5 V 1 2 3D 0.45+0.15/-0.10E 4.25 MAXIC Colle

SEMICONDUCTORFTA1661TECHNICAL DATAACHPNP TransistorGFEATURES DDK Small Flat Package F FDIM MILLIMETERS High Current Application A 4.70 MAX_+B 2.50 0.20 High Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-8

SEMICONDUCTORFTA1664TECHNICAL DATAACHGFTA1664 TRANSISTOR (PNP) FEATURES DDK Complementary to FTC4376 F FDIM MILLIMETERS Small Flat Package A 4.70 MAX_+B 2.50 0.20 High Current Application C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-89MAX

SEMICONDUCTORFTA1663TECHNICAL DATAPNP TransistorAFEATURES CH High current applications G Complementary to FTC4375 DDMAXIMUM RATINGS (TA=25 unless otherwise noted)KF FDIM MILLIMETERSSymbol Parameter Value UnitsA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage -30 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage -30 V E 4.25 MAX