FTA1666 Todos los transistores

SEMICONDUCTOR FTA1666 TECHNICAL DATA A C H G FTA1666 TRANSISTOR (PNP) D D K FEATURES F F DIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX Small Flat Package 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX Low Saturation Voltage _ + F 1.50 0.10 G 0.40 TYP 1. BASE Power Amplifier and Switching Application H 1.7 MAX 2. COLLECTOR J 0.7 MIN

SEMICONDUCTOR FTA1662 TECHNICAL DATA FEATURES A Complementary to FTC4374 C H G MAXIMUM RATINGS (TA=25 unless otherwise noted) D D Symbol Parameter Value Units K VCBO Collector-Base Voltage -80 V F F DIM MILLIMETERS A 4.70 MAX VCEO Collector-Emitter Voltage -80 V _ + B 2.50 0.20 C 1.70 MAX VEBO Emitter-Base Voltage -5 V 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX IC Colle

SEMICONDUCTOR FTA1661 TECHNICAL DATA A C H PNP Transistor G FEATURES D D K Small Flat Package F F DIM MILLIMETERS High Current Application A 4.70 MAX _ + B 2.50 0.20 High Voltage C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-8

SEMICONDUCTOR FTA1664 TECHNICAL DATA A C H G FTA1664 TRANSISTOR (PNP) FEATURES D D K Complementary to FTC4376 F F DIM MILLIMETERS Small Flat Package A 4.70 MAX _ + B 2.50 0.20 High Current Application C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-89 MAX

SEMICONDUCTOR FTA1663 TECHNICAL DATA PNP Transistor A FEATURES C H High current applications G Complementary to FTC4375 D D MAXIMUM RATINGS (TA=25 unless otherwise noted) K F F DIM MILLIMETERS Symbol Parameter Value Units A 4.70 MAX _ + B 2.50 0.20 VCBO Collector-Base Voltage -30 V C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 VCEO Collector-Emitter Voltage -30 V E 4.25 MAX