FTC3227
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FTC3227
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.4
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO92L
Búsqueda de reemplazo de transistor bipolar FTC3227
FTC3227
Datasheet (PDF)
..1. Size:101K first silicon
ftc3227 to92l.pdf 
SEMICONDUCTORFTC3227 TECHNICAL DATATO 92L FTC3227 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES Complementary to FTA1274 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.4 A PC Collector Power Dissipa
9.1. Size:291K first silicon
ftc3200.pdf
SEMICONDUCTORFTC3200TECHNICAL DATAB CDIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 + 0.50L 2.30F FM 0.51 MAX1 2 3 1. EMITTER2. COLLECTOR3. BASETO-922013. 08. 05 Revision No : 0 1/2AJCLMFTC32002013. 08. 05 Revision No : 0 2/2
9.2. Size:185K first silicon
ftc3202.pdf
SEMICONDUCTORFTC3202TECHNICAL DATAGeneral Purpose TransistorNPN SiliconB CFEATURE DIM MILLIMETERSComplementary PNP Type available (FTA1270)A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27G 0.85H 0.45Parameter Symbol Value Units _HJ 14.00 0.50+L 2.30F FVCBO Collector-Base Voltage 35 V
9.3. Size:218K first silicon
ftc3203.pdf
SEMICONDUCTORFTC3203TECHNICAL DATAB CFTC3203 TRANSISTOR (NPN) FEATURES DIM MILLIMETERS Complementary to FTA1271 A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (Ta=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value Unit G 0.85H 0.45VCBO Collector-Base Voltage 35 V _HJ 14.00 0.50+L 2.30F FVCEO Collector-Emitter Volt
9.4. Size:218K first silicon
ftc3265.pdf
SEMICONDUCTORFTC3265TECHNICAL DATAGeneral Purpose TransistorsLOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100~320. Low Saturation Voltage3: VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA).Suitable for Driver Stage of Small Motor.2Complementary to FTA1298.1Small Package.SOT 23MAXIMUM RATING (Ta=25)CH
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
