FTC4370A Todos los transistores

SEMICONDUCTOR FTC4370A TECHNICAL DATA C A E DIM MILLIMETERS FTC4370A TRANSISTOR (NPN) _ A 10.16 0.20 + _ B 15.00 0.20 + _ C 3.00 0.20 + D 0.625 0.125 E 3.50 typ FEATURES F 2.7 typ _ G 16.80 0.4 + L High Transition Frequency M _ + R H 0.45 0.1 _ J 13.20 + 0.20 Complementary to FTA1659A _ K 3.80 0.2 + D L 1.52 MAX High Voltage Application M 1.52 MAX

SEMICONDUCTOR FTC4375 TECHNICAL DATA FEATURES A C SOT-89 NPN Transistor H G MAXIMUM RATINGS (TA=25 unless otherwise noted) D D K Symbol Parameter Value Units F F DIM MILLIMETERS A 4.70 MAX VCBO Collector-Base Voltage 30 V _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 VCEO Collector-Emitter Voltage 30 V E 4.25 MAX _ + F 1.50 0.10 VEBO Emitter-Base Voltage 5 V

SEMICONDUCTOR FTC4374 TECHNICAL DATA FEATURES Complementary to FTA1662 A C H G MAXIMUM RATINGS (TA=25 unless otherwise noted) D Symbol Parameter Value Units D K VCBO Collector-Base Voltage 80 V F F DIM MILLIMETERS VCEO Collector-Emitter Voltage 80 V A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX VEBO Emitter-Base Voltage 5 V 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX IC Collecto

SEMICONDUCTOR FTC4378 TECHNICAL DATA A C H G FTC4378 TRANSISTOR (NPN) FEATURES D D K High voltage F F DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN VCBO Collector-Base Volt

SEMICONDUCTOR FTC4377 TECHNICAL DATA FTC4377 TRANSISTOR (NPN) A C H G FEATURES Low voltage Low Vce(sat) 0.5V Max (Ic=2A, IB=0.05A) D D K F F DIM MILLIMETERS A 4.70 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 Symbol Parameter Value Unit E 4.25 MAX _ + F 1.50 0.10 VCBO Collector-Base Voltage 30 V G 0.40

SEMICONDUCTOR FTC4379 TECHNICAL DATA A C H G FTC4379 TRANSISTOR (NPN) D D K FEATURES F F DIM MILLIMETERS Complementary to FTA1666 A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX Small Flat Package 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX Low Saturation Voltage _ + F 1.50 0.10 G 0.40 TYP 1. BASE Power Amplifier and Switching Application H 1.7 MAX 2. COLLECTOR J 0.7 MIN

SEMICONDUCTOR FTC4376 TECHNICAL DATA A C H G FTC4376 TRANSISTOR (NPN) D FEATURES D K Small Flat Package F F DIM MILLIMETERS A 4.70 MAX High Current Application _ + B 2.50 0.20 C 1.70 MAX Complementary to FTA1664 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-89 MAXIM

SEMICONDUCTOR FTC4373 TECHNICAL DATA A C H NPN Transistor G FEATURES D D K Small Flat Package F F DIM MILLIMETERS High Current Application A 4.70 MAX _ + B 2.50 0.20 High Voltage C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-8