FTD1898 Todos los transistores

 ..1. Size:100K  first silicon
 ftd1898.pdf

SEMICONDUCTOR FTD1898 TECHNICAL DATA A C H G FTD1898 TRANSISTOR (NPN) FEATURES D D K High Breakdown Voltage and Current F F DIM MILLIMETERS Excellent DC Current Gain Linearity A 4.70 MAX _ + B 2.50 0.20 Complement the FTB1260 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 Low Collector-Emitter Saturation Voltage E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MA

 8.1. Size:299K  first silicon
 ftd1899.pdf

SEMICONDUCTOR FTD1899 TECHNICAL DATA FTD1899 TRANSISTOR (NPN) FEATURES A I C J Low VCE(sat) High Transition Frequency DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX Symbol Parameter Value Unit I 2 30 0 2 L F F VCBO Collector-Base Voltage 60 V J 0