FTD882D Todos los transistores

SEMICONDUCTOR FTD882D TECHNICAL DATA FTD882D TRANSISTOR A I FEATURES C J Low Speed Switching DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 0 2 L F F VCBO Collector-Base Voltage 40 V J 0 5 0 1 L 0 50 0 10 1 2 3

SEMICONDUCTOR FTD882F TECHNICAL DATA A FTD882F NPN TRANSISTOR C H G FEATURES Power dissipation D D K F F DIM MILLIMETERS A 4.70 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 Symbol Parameter Value Unit E 4.25 MAX _ + F 1.50 0.10 VCBO Collector-Base Voltage 40 V G 0.40 TYP 1. BASE H 1.8 MAX 2. COLLE

SEMICONDUCTOR FTD882 TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING D E A FEATURES Complementary to FTB772. C F G DIM MILLIMETERS B A 8.3 MAX MAXIMUM RATING (Ta=25 ) B 11.3 0.3 C 4.15 TYP 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT D 3.2 0.2 E 2.0 0.2 H F 2.8 0.1 VCBO Collector-Base Voltage 40 V I G 3.2 0.1 H 1.27 0.1 VCEO K Collector-Emitter V

SEMICONDUCTOR FTD880 TECHNICAL DATA FTD880 TRANSISTOR (NPN) A O FEATURES C F Low Frequency Power Amplifier E Complement to FTB834 B DIM MILLIMETERS A 10.15 0.15 B 15.30 MAX C 1.3+0.1/-0.15 P D 0.8 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 3.8 0.2 F 2.7 0.2 J H 0.4 0.15 Symbol Parameter Value Unit D J 13.6 0.2 N 2.54 0.2 H N