MJE13003I Todos los transistores

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MJE13003I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003I

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 5 MHz

Ganancia de corriente contínua (hfe): 8

Empaquetado / Estuche: TO251

Búsqueda de reemplazo de transistor bipolar MJE13003I

 

MJE13003I Datasheet (PDF)

1.1. mje13003i7.pdf Size:215K _update

MJE13003I
MJE13003I

MJE13003I7(3DD13003I7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.2. mje13003i5.pdf Size:830K _update

MJE13003I
MJE13003I

MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126(R)塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126(R) Plastic Package. 特征 / Features 耐压高,快速转换。 High Voltage Capability High Speed Switching. 用途 / Applications 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 High

1.3. mje13003i6.pdf Size:207K _update

MJE13003I
MJE13003I

MJE13003I6(3DD13003I6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.4. mje13003i1.pdf Size:200K _update

MJE13003I
MJE13003I

MJE13003I1(3DD13003I1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

1.5. mje13003i.pdf Size:205K _first_silicon

MJE13003I
MJE13003I

SEMICONDUCTOR MJE13003I TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. DIM MILLIMETERS A 2.20 ± 0.2 B 1.50 ± 0.15 FEATURES c 0.5 ± 0.07 Excellent Switching Times D 6.50 ± 0.15 1 2 3 : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A e 2.30 typ L 7.70 ± 0.2 High Collector Voltage : VCBO=700V. A1 1.20 ± 0.05 b1 0.8 ± 0.1

Otros transistores... FTD4240 , FTD880 , FTD882 , FTD882D , FTD882F , MJD122I , MJE13002B , MJE13003A , BU508 , MJE13003T , MJE13005T , MMBTA42F , MMBTA92F , MMBTH10Q , A966O , A966Y , DDA124EK .

 


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