13009 Todos los transistores

 

13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 13009

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 13009

 

13009 Datasheet (PDF)

..1. 13009.pdf Size:114K _jdsemi

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R13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT

0.1. xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 sxw13009.pdf Size:222K _1

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0.2. mje13009.pdf Size:451K _motorola

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Order this documentMOTOROLAby MJE13009/DSEMICONDUCTOR TECHNICAL DATAMJE13009**Motorola Preferred DeviceDesigner's Data Sheet12 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTOR

 0.3. phe13009.pdf Size:47K _philips

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITI

0.4. sth13009.pdf Size:232K _st

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STH13009High voltage fast-switching NPN power transistorPreliminary data.Features High voltage capability Low spread of dynamic parameters Very high switching speedApplications3 Switching mode power supplies21TO-220DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagramMulti Epitaxial Planar technology for high

 0.5. stwh13009.pdf Size:230K _st

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STWH13009High voltage fast-switching NPN power transistor.Features High voltage capability Low spread of dynamic parameters Very high switching speedApplications3 Switching mode power supplies21TO-247DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagramMulti Epitaxial Planar technology for high switching speed

0.6. st13009.pdf Size:175K _st

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ST13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Applications21 Switch mode power suppliesTO-220DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Figure

0.7. mje13009.pdf Size:78K _st

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MJE13009SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe MJE13009 is a multiepitaxial mesa NPNtransistor. It is mounted in Jedec TO-220 plasticpackage, intended for use in motor controls,switching regulators, deflection circuits, etc.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-Em

0.8. stw13009.pdf Size:195K _st

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STW13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Application21 Switch mode power suppliesTO-247DescriptionThe device is manufactured using high voltagemulti-epitaxial planar technology for highFigure 1

0.9. fjp13009.pdf Size:181K _fairchild_semi

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March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter

0.10. fja13009.pdf Size:194K _fairchild_semi

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October 2008FJA13009High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode ApplicationsTO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 VCEO VEBO Emitter-Base Voltage 9 V IC Collec

0.11. fjpf13009.pdf Size:134K _fairchild_semi

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December 2007FJPF13009NPN Silicon TransistorHigh Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collec

0.12. mj13009.pdf Size:82K _njs

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0.13. mjf13009.pdf Size:80K _njs

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0.14. kse13009f.pdf Size:25K _samsung

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KSE13009F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 12 A Collector Current (Pulse) IC 24

0.15. mje13009-d.pdf Size:189K _onsemi

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MJE13009GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThe MJE13009G is designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,12 AMPERESolenoid/Relay drivers and Deflection circuits.NPN S

0.16. mje13009-p.pdf Size:424K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

0.17. mje13009-k.pdf Size:440K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

0.18. mje13009g.pdf Size:448K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

0.19. mje13009.pdf Size:448K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

0.20. mje13009d.pdf Size:183K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lig

0.21. ts13009.pdf Size:272K _taiwansemi

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TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

0.22. ts13009 a07.pdf Size:274K _taiwansemi

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TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

0.23. mje13009f.pdf Size:280K _kec

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SEMICONDUCTOR MJE13009FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

0.24. mje13009.pdf Size:272K _kec

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SEMICONDUCTOR MJE13009TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

0.25. 3dd13009.pdf Size:198K _lge

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3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin

0.26. hmje13009a.pdf Size:55K _hsmc

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Spec. No. : HE200206HI-SINCERITYIssued Date : 2002.02.01Revised Date : 2006.07.04MICROELECTRONICS CORP.Page No. : 1/6HMJE13009A12 AMPERE NPN SILICON POWER TRANSISTORDescriptionThe HMJE13009A is designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switch-controls, Solenoid/Relay dri

0.27. mje13009a.pdf Size:252K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

0.28. mje13009a 1.pdf Size:207K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

0.29. mje13009.pdf Size:206K _sisemi

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE

0.30. 3dd13009k.pdf Size:327K _jilin_sino

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NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13009K ;NSpe MAIN CHARACTERISTICS \ Package IC 12AVCEO 400VPC(TO-220C) 100WPC(TO-3PB) 120W(u APPLICATIONS op

0.31. mje13009z8.pdf Size:449K _blue-rocket-elect

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MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

0.32. br3dd13009x7r.pdf Size:463K _blue-rocket-elect

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MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

0.33. mje13009x8.pdf Size:423K _blue-rocket-elect

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MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

0.34. mje13009x7.pdf Size:463K _blue-rocket-elect

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MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

0.35. mje13009x9.pdf Size:445K _blue-rocket-elect

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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

0.36. br3dd13009x9p.pdf Size:445K _blue-rocket-elect

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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

0.37. mje13009zj.pdf Size:450K _blue-rocket-elect

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MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ

0.38. br3dd13009x8f.pdf Size:423K _blue-rocket-elect

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MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

0.39. br3dd13009z8f.pdf Size:449K _blue-rocket-elect

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MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

0.40. ksh13009w.pdf Size:141K _shantou-huashan

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13009W HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature

0.41. 3dd13009 a8.pdf Size:153K _crhj

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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

0.42. 3dd13009an.pdf Size:159K _crhj

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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

0.43. 3dd13009 c8.pdf Size:154K _crhj

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NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

0.44. 3dd13009 an.pdf Size:155K _crhj

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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

0.45. 3dd13009x8d.pdf Size:155K _crhj

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NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

0.46. 3dd13009 x8d.pdf Size:154K _crhj

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NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

0.47. 3dd13009c8.pdf Size:153K _crhj

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NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

0.48. 3dd13009a8.pdf Size:153K _crhj

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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

0.49. 13009sdl.pdf Size:121K _jdsemi

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R13009SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.50. 13009t.pdf Size:112K _jdsemi

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R13009T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

0.51. p13009.pdf Size:115K _jdsemi

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RP13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

0.52. 13009a.pdf Size:113K _jdsemi

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R13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

0.53. p13009a.pdf Size:113K _jdsemi

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RP13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FE

0.54. sjt13009nt.pdf Size:338K _silan

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SJT13009NT SJT13009NT NPN SJT13009NT NPN SJT13009NT TO-220HW

0.55. sbp13009s.pdf Size:417K _winsemi

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SBP13009-SSBP13009-SSBP13009-SSBP13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para

0.56. sbp13009o.pdf Size:334K _winsemi

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SBP13009-OSBP13009-OSBP13009-OSBP13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

0.57. sbw13009o.pdf Size:404K _winsemi

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SBW13009-OSBW13009-OSBW13009-OSBW13009-OHigh voltage Fast Switching NPN Power TransistorFeatures Very High Switching Speed High voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para

0.58. sbf13009-o.pdf Size:326K _winsemi

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SBF13009-OSBF13009-OSBF13009-OSBF13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

0.59. wbp13009-k.pdf Size:328K _winsemi

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WBP13009-KWBP13009-KWBP13009-KWBP13009-KHigh Voltage Fast- Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

0.60. sbw13009k.pdf Size:428K _winsemi

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SBW13009-KSBW13009-KSBW13009-KSBW13009-KHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage,High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Param

0.61. sbw13009s.pdf Size:428K _winsemi

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SBW13009-SSBW13009-SSBW13009-SSBW13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage,High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Param

0.62. sbp13009k.pdf Size:316K _winsemi

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SBP13009-KSBP13009-KSBP13009-KSBP13009-KHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter

0.63. fha13009a.pdf Size:374K _feihonltd

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TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw

0.64. mje13009z7.pdf Size:233K _foshan

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MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

0.65. mje13009z9.pdf Size:232K _foshan

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MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

0.66. ksh13009l.pdf Size:219K _semihow

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KSH13009L SEMIHOW REV.A0,May 2003KSH13009LKSH13009LSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-3PCHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorC

0.67. ksh13009al.pdf Size:459K _semihow

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KSH13009AL SEMIHOW REV.A1,Oct 2007 KSH13009ALKSH13009AL Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 130 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base

0.68. ksh13009af.pdf Size:191K _semihow

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KSH13009AF KSH13009AFKSH13009AFSwitch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220FCHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector

0.69. ksh13009.pdf Size:227K _semihow

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KSH13009KSH13009 SEMIHOW REV.A1,Oct 2007KSH130009KSH13009Switch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220

0.70. ksh13009f.pdf Size:224K _semihow

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KSH13009FKSH13009F SEMIHOW REV.A1,Oct 2007KSH130009FKSH13009FSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-2

0.71. ksh13009a.pdf Size:203K _semihow

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KSH13009A KSH13009AKSH13009ASwitch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCo

0.72. mje13009-3pn.pdf Size:173K _inchange_semiconductor

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;con

0.73. fjp13009.pdf Size:232K _inchange_semiconductor

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isc Silicon NPN Power Transistor FJP13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

0.74. mjf13009.pdf Size:215K _inchange_semiconductor

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isc Silicon NPN Power Transistor MJF13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

0.75. 3dd13009n.pdf Size:253K _inchange_semiconductor

13009 13009

isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

0.76. 3dd13009k.pdf Size:210K _inchange_semiconductor

13009 13009

isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM

0.77. 3dd13009.pdf Size:216K _inchange_semiconductor

13009 13009

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

0.78. mje13009f.pdf Size:215K _inchange_semiconductor

13009 13009

isc Silicon NPN Power Transistor MJE13009FDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are

0.79. mje13009.pdf Size:157K _inchange_semiconductor

13009 13009

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

0.80. 3dd13009nl.pdf Size:253K _inchange_semiconductor

13009 13009

isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N3904 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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