All Transistors. 13009 Datasheet

 

13009 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 13009
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 13009 Transistor Equivalent Substitute - Cross-Reference Search

   

13009 Datasheet (PDF)

 ..1. Size:114K  jdsemi
13009.pdf

13009 13009

R13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT

 0.2. Size:451K  motorola
mje13009.pdf

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Order this documentMOTOROLAby MJE13009/DSEMICONDUCTOR TECHNICAL DATAMJE13009**Motorola Preferred DeviceDesigner's Data Sheet12 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTOR

 0.3. Size:47K  philips
phe13009.pdf

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITI

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stw13009.pdf

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STW13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Application21 Switch mode power suppliesTO-247DescriptionThe device is manufactured using high voltagemulti-epitaxial planar technology for highFigure 1

 0.5. Size:230K  st
stwh13009.pdf

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STWH13009High voltage fast-switching NPN power transistor.Features High voltage capability Low spread of dynamic parameters Very high switching speedApplications3 Switching mode power supplies21TO-247DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagramMulti Epitaxial Planar technology for high switching speed

 0.6. Size:232K  st
sth13009.pdf

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STH13009High voltage fast-switching NPN power transistorPreliminary data.Features High voltage capability Low spread of dynamic parameters Very high switching speedApplications3 Switching mode power supplies21TO-220DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagramMulti Epitaxial Planar technology for high

 0.7. Size:78K  st
mje13009.pdf

13009 13009

MJE13009SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe MJE13009 is a multiepitaxial mesa NPNtransistor. It is mounted in Jedec TO-220 plasticpackage, intended for use in motor controls,switching regulators, deflection circuits, etc.321TO-220INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-Em

 0.8. Size:175K  st
st13009.pdf

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ST13009High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed3Applications21 Switch mode power suppliesTO-220DescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high Figure

 0.9. Size:194K  fairchild semi
fja13009.pdf

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October 2008FJA13009High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode ApplicationsTO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 VCEO VEBO Emitter-Base Voltage 9 V IC Collec

 0.10. Size:181K  fairchild semi
fjp13009.pdf

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March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter

 0.11. Size:134K  fairchild semi
fjpf13009.pdf

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December 2007FJPF13009NPN Silicon TransistorHigh Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collec

 0.12. Size:80K  njs
mjf13009.pdf

13009 13009

 0.13. Size:82K  njs
mj13009.pdf

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kse13009f.pdf

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KSE13009F NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONTO-220F High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 12 A Collector Current (Pulse) IC 24

 0.15. Size:50K  onsemi
fja13009.pdf

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FJA13009High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Co

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fjp13009tu fjp13009h2tu.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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mje13009-d.pdf

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MJE13009GSWITCHMODEt SeriesNPN Silicon PowerTransistorsThe MJE13009G is designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They are http://onsemi.comparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulators, Inverters, Motor Controls,12 AMPERESolenoid/Relay drivers and Deflection circuits.NPN S

 0.18. Size:265K  onsemi
fjpf13009.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.19. Size:265K  onsemi
fjpf13009h1tu fjpf13009h2tu.pdf

13009 13009

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.20. Size:440K  utc
mje13009-k.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

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mje13009-p.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speedpower switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls,Sole

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mje13009g.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

 0.23. Size:448K  utc
mje13009.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

 0.24. Size:183K  utc
mje13009d.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lig

 0.25. Size:272K  taiwansemi
ts13009.pdf

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TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

 0.26. Size:274K  taiwansemi
ts13009 a07.pdf

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TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

 0.27. Size:280K  kec
mje13009f.pdf

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SEMICONDUCTOR MJE13009FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

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mje13009.pdf

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SEMICONDUCTOR MJE13009TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE SWITCHING APPLICATION.HIGH SPEED DC-DC CONVERTER APPLICATION.FEATURESExcellent Switching Times: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8AHigh Collector Voltage : VCBO=700V.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 700 V

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3dd13009.pdf

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3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin

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hmje13009a.pdf

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Spec. No. : HE200206HI-SINCERITYIssued Date : 2002.02.01Revised Date : 2006.07.04MICROELECTRONICS CORP.Page No. : 1/6HMJE13009A12 AMPERE NPN SILICON POWER TRANSISTORDescriptionThe HMJE13009A is designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switch-controls, Solenoid/Relay dri

 0.31. Size:252K  sisemi
mje13009a.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

 0.32. Size:206K  sisemi
mje13009.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE /MJE SERIES TRANSISTORS MJE13009NPN MJE

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mje13009a 1.pdf

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE /MJE SERIES TRANSISTORS MJE13009ANPN MJE

 0.34. Size:327K  jilin sino
3dd13009k.pdf

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13009K MAIN CHARACTERISTICS Package IC 12AVCEO 400VPC(TO-220C) 100WPC(TO-3PB) 120W APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply

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mje13009z8.pdf

13009 13009

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

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mje13009x7.pdf

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MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

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br3dd13009z8f.pdf

13009 13009

MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 0.38. Size:423K  blue-rocket-elect
br3dd13009x8f.pdf

13009 13009

MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 0.39. Size:423K  blue-rocket-elect
mje13009x8.pdf

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MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.

 0.40. Size:445K  blue-rocket-elect
mje13009x9.pdf

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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

 0.41. Size:463K  blue-rocket-elect
br3dd13009x7r.pdf

13009 13009

MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .

 0.42. Size:450K  blue-rocket-elect
mje13009zj.pdf

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MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ

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br3dd13009x9p.pdf

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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit

 0.44. Size:141K  shantou-huashan
ksh13009w.pdf

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13009W HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control ABSOLUTE MAXIMUM RATINGSTa=25 TO-263D2PAKTstgStorage Temperature -55~150TjJunction Temperature

 0.45. Size:153K  crhj
3dd13009a8.pdf

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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 0.46. Size:153K  crhj
3dd13009c8.pdf

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NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 0.47. Size:154K  crhj
3dd13009 x8d.pdf

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NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

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3dd13009 an.pdf

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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

 0.49. Size:154K  crhj
3dd13009 c8.pdf

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NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

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3dd13009 a8.pdf

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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

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3dd13009an.pdf

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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

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3dd13009x8d.pdf

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NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W

 0.53. Size:113K  jdsemi
13009a.pdf

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R13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

 0.54. Size:113K  jdsemi
p13009a.pdf

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RP13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FE

 0.55. Size:121K  jdsemi
13009sdl.pdf

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R13009SDL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.56. Size:115K  jdsemi
p13009.pdf

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RP13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

 0.57. Size:112K  jdsemi
13009t.pdf

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R13009T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA

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sjt13009nt.pdf

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SJT13009NT SJT13009NT NPN SJT13009NT NPN SJT13009NT TO-220HW

 0.59. Size:316K  winsemi
sbp13009k.pdf

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SBP13009-KSBP13009-KSBP13009-KSBP13009-KHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter

 0.60. Size:428K  winsemi
sbw13009k.pdf

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SBW13009-KSBW13009-KSBW13009-KSBW13009-KHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage,High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Param

 0.61. Size:404K  winsemi
sbw13009o.pdf

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SBW13009-OSBW13009-OSBW13009-OSBW13009-OHigh voltage Fast Switching NPN Power TransistorFeatures Very High Switching Speed High voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para

 0.62. Size:417K  winsemi
sbp13009s.pdf

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SBP13009-SSBP13009-SSBP13009-SSBP13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para

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sbw13009s.pdf

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SBW13009-SSBW13009-SSBW13009-SSBW13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage,High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Param

 0.64. Size:334K  winsemi
sbp13009o.pdf

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SBP13009-OSBP13009-OSBP13009-OSBP13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC

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wbp13009-k.pdf

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WBP13009-KWBP13009-KWBP13009-KWBP13009-KHigh Voltage Fast- Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

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sbf13009-o.pdf

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SBF13009-OSBF13009-OSBF13009-OSBF13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

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fha13009a.pdf

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TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw

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mje13009z9.pdf

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MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

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mje13009z7.pdf

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MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25) 2.0 W CP (Tc=25) 100 W CT 150 j

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ksh13009l.pdf

13009 13009

KSH13009L SEMIHOW REV.A0,May 2003KSH13009LKSH13009LSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-3PCHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorC

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ksh13009af.pdf

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KSH13009AF KSH13009AFKSH13009AFSwitch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220FCHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector

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ksh13009a.pdf

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KSH13009A KSH13009AKSH13009ASwitch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCo

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ksh13009.pdf

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KSH13009KSH13009 SEMIHOW REV.A1,Oct 2007KSH130009KSH13009Switch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-220

 0.74. Size:224K  semihow
ksh13009f.pdf

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KSH13009FKSH13009F SEMIHOW REV.A1,Oct 2007KSH130009FKSH13009FSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls12 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted100 WattsTO-2

 0.75. Size:459K  semihow
ksh13009al.pdf

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KSH13009AL SEMIHOW REV.A1,Oct 2007 KSH13009ALKSH13009AL Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 130 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base

 0.76. Size:164K  wuxi china
3dd13009a8.pdf

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NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W

 0.77. Size:155K  wuxi china
3dd13009an.pdf

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NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W

 0.78. Size:276K  cn ween semi
phe13009.pdf

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WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M

 0.79. Size:1254K  cn xch
3dd13009an.pdf

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3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am

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3dd13009k.pdf

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isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 0.81. Size:215K  inchange semiconductor
mje13009f.pdf

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isc Silicon NPN Power Transistor MJE13009FDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are

 0.82. Size:253K  inchange semiconductor
3dd13009n.pdf

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isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 0.83. Size:215K  inchange semiconductor
mjf13009.pdf

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isc Silicon NPN Power Transistor MJF13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

 0.84. Size:232K  inchange semiconductor
fjp13009.pdf

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isc Silicon NPN Power Transistor FJP13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

 0.85. Size:157K  inchange semiconductor
mje13009.pdf

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;

 0.86. Size:253K  inchange semiconductor
3dd13009nl.pdf

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isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 0.87. Size:216K  inchange semiconductor
3dd13009.pdf

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

 0.88. Size:173K  inchange semiconductor
mje13009-3pn.pdf

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;con

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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