All Transistors. 13009 Datasheet

 

13009 Datasheet and Replacement


   Type Designator: 13009
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
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13009 Datasheet (PDF)

 ..1. Size:114K  jdsemi
13009.pdf pdf_icon

13009

R13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEAT

 0.2. Size:451K  motorola
mje13009.pdf pdf_icon

13009

Order this documentMOTOROLAby MJE13009/DSEMICONDUCTOR TECHNICAL DATAMJE13009**Motorola Preferred DeviceDesigner's Data Sheet12 AMPERESWITCHMODE SeriesNPN SILICONPOWER TRANSISTORNPN Silicon Power Transistors400 VOLTSThe MJE13009 is designed for highvoltage, highspeed power switching inductive 100 WATTScircuits where fall time is critical. They are particularl

 0.3. Size:47K  philips
phe13009.pdf pdf_icon

13009

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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