13005D Todos los transistores

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13005D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 13005D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO220

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13005D Datasheet (PDF)

1.1. sbp13005d.pdf Size:313K _update

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SBP13005D SBP13005D SBP13005D SBP13005D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot h Variation FE ◆ Wide Reverse Bias SOA ◆ Built-in fr

1.2. mje13005dq4.pdf Size:251K _update

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13005D

MJE13005DQ4(3DD13005DQ4) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C P (T

1.3. mje13005dq5.pdf Size:239K _update

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13005D

MJE13005DQ5(3DD13005DQ5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

1.4. mje13005dt3.pdf Size:193K _update

13005D
13005D

MJE13005DT3 (3DD13005DT3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9 V EBO I 4 A C I 2 A B

1.5. mje13005dt7.pdf Size:204K _update

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13005D

MJE13005DT7(3DD13005DT7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C I 2.0 A

1.6. stt13005d.pdf Size:261K _update

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STT13005D High voltage fast-switching NPN power transistor Features ■ Integrated antiparallel collector-emitter diode ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 1 2 ■ Electronic ballast for fluorescent lighting 3 SOT-32 ■ Flyback and forward single transistor low power converters Figure 1. Inte

1.7. mje13005dp5.pdf Size:292K _update

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13005D

MJE13005DP5(3DD13005DP5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 2.5 A C

1.8. mje13005drb.pdf Size:235K _update

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13005D

MJE13005DRB 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4.0 A C P (Ta=25℃)

1.9. mje13005dq3.pdf Size:244K _update

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13005D

MJE13005DQ3(3DD13005DQ3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 450 V CEO V 9.0 V EBO I 4 A C P

1.10. apt13005di-dtf-dt.pdf Size:543K _update

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A Product Line of Diodes Incorporated Green APT13005D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data  BVCEO > 450V  Case: TO220F-3, TO251, TO220AB Type C  BVCES > 700V  Case Material: Molded Plastic, "Green" Molding Compound  BVEBO > 9V UL Flammability Classification Rating 94V-0  IC = 4A High Collector Current  Terminals: Finish - Matte Tin F

1.11. mje13005dq7.pdf Size:248K _update

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13005D

MJE13005DQ7(3DD13005DQ7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于高频电子照明电路、开关及开关电源。 Purpose: High frequency electronic lighting, switching power supply applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 4 A C P

1.12. mje13005dc.pdf Size:857K _update

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SEMICONDUCTOR MJE13005DC TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. ·Built-in Free wheeling Diode makes efficient anti saturation operation. ·Suitable for half bridge light ballast Applications. ·Low base drive requirement. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V VCEO Collec

1.13. sbp13005d1.pdf Size:314K _update

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SBP13005D1 SBP13005D1 SBP13005D1 SBP13005D1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot h Variation FE ◆ Wide Reverse Bias SOA ◆ Built-i

1.14. stt13005d.pdf Size:262K _st2

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13005D

STT13005D High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 SOT-32 Flyback and forward single transistor low power converters Figure 1. Internal schematic

1.15. mje13005d-k.pdf Size:115K _utc

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13005D

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in energ

1.16. mje13005d.pdf Size:118K _utc

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13005D

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 1 1 TRANSISTOR TO-220 TO-220F ? DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1 power transistor. It is characterized by high breakdown voltage, 1 high current capability, high switching speed and high reliability. TO-251 TO-126 The UTC MJE1

1.17. cdl13005d.pdf Size:223K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005D TO-220 Plastic Package with Built in Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V VEBO Emitter Base Voltage 9 V Collector Current Continuous IC 4 A Power Dissipation upt

1.18. mje13005d.pdf Size:51K _kec

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SEMICONDUCTOR MJE13005D TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A Built-in Free wheeling Diode makes efficient anti saturation operation. O C Suitable for half bridge light ballast Applications. F DIM MILLIMETERS Low base drive requirement. E _ G A 9.9 + 0.2 MAXIMUM RATING (Ta=25 ) B 15.95 MAX B C 1.3+0.1/-0.05 Q _ CHARACT

1.19. mje13005df.pdf Size:375K _kec

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SEMICONDUCTOR MJE13005DF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. A C ·Built-in Free wheeling Diode makes efficient anti saturation operation. DIM MILLIMETERS S ·Suitable for half bridge light ballast Applications. _ A 10.0 + 0.3 _ + B 15.0 0.3 E ·Low base drive requirement. C _ 2.70 0.3 + D 0.76+0.09/-0.05 MAXIMUM RATI

1.20. mje13005d.pdf Size:232K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13005D NPN D / D SERIES TRANSISTORS MJE13005D NPN D 系列晶体

1.21. bld13005dx.pdf Size:587K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD13005DX NPN D / D SERIES TRANSISTORS BLD13005DX NPN D 系列晶体

1.22. h13005dl.pdf Size:120K _jdsemi

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13005D

R H13005DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2

1.23. h13005d.pdf Size:118K _jdsemi

13005D
13005D

R H13005D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.

1.24. 13005dl.pdf Size:117K _jdsemi

13005D
13005D

R 13005DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2.

1.25. h13005d 2.pdf Size:118K _jdsemi

13005D
13005D

R H13005D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.

1.26. 13005d.pdf Size:116K _jdsemi

13005D
13005D

R 13005D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.F

1.27. 13005dl 2.pdf Size:116K _jdsemi

13005D
13005D

R 13005DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2.

Otros transistores... 13001-0 , 13001-2 , 13001-A , 13003AD , 13003B , 13005A , 13005AD , 13005ADL , MD1803DFX , 13005DL , 13005ED , 13005F , 13005S , 13005SD , 13005SDL , 13007DL , 13007S .

 


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