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13009T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 13009T

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 95 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 5 MHz

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO220

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13009T Datasheet (PDF)

1.1. 13009t.pdf Size:112K _jdsemi

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R 13009T 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEA

5.1. sbw13009k.pdf Size:428K _update

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SBW13009-K SBW13009-K SBW13009-K SBW13009-K High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Param

5.2. sbw13009s.pdf Size:428K _update

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SBW13009-S SBW13009-S SBW13009-S SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Param

 5.3. sbf13009-o.pdf Size:326K _update

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SBF13009-O SBF13009-O SBF13009-O SBF13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description G

5.4. mje13009x8.pdf Size:423K _update

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MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 主要用于节能灯电路。 High frequency electronic lighting ballast applications.

 5.5. sbp13009s.pdf Size:417K _update

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SBP13009-S SBP13009-S SBP13009-S SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features � Very High Switching Speed � High Voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para

5.6. sbp13009k.pdf Size:316K _update

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SBP13009-K SBP13009-K SBP13009-K SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter

5.7. sbw13009o.pdf Size:404K _update

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SBW13009-O SBW13009-O SBW13009-O SBW13009-O High voltage Fast Switching NPN Power Transistor Features � Very High Switching Speed � High voltage Capability � Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para

5.8. br3dd13009x7r.pdf Size:463K _update

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MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications . 内部等效

5.9. mje13009x7.pdf Size:463K _update

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MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications . 内部等效

5.10. br3dd13009x9p.pdf Size:445K _update

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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列

5.11. mje13009z9.pdf Size:232K _update

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MJE13009Z9(3DD13009Z9) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25℃) 2.0 W C P (Tc=25℃) 100 W C T 150 ℃ j

5.12. mje13009-3pn.pdf Size:173K _update

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;con

5.13. st13009.pdf Size:175K _update

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ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed 3 Applications 2 1 ■ Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure

5.14. sbp13009o.pdf Size:334K _update

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SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B B B B C C C C

5.15. mje13009x9.pdf Size:445K _update

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MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package. 特征 / Features 快速转换。 High Speed Switching 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equivalent Circuit 引脚排列

5.16. mjf13009.pdf Size:80K _update

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5.17. mje13009z8.pdf Size:449K _update

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MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等

5.18. br3dd13009x8f.pdf Size:423K _update

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MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 主要用于节能灯电路。 High frequency electronic lighting ballast applications.

5.19. mje13009g.pdf Size:448K _update

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UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid

5.20. br3dd13009z8f.pdf Size:449K _update

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MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高,开关速度快。 High voltage capability, high speed switching. 用途 / Applications 节能灯电路。 High frequency electronic lighting ballast applications. 内部等

5.21. mje13009z7.pdf Size:233K _update

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MJE13009Z7(3DD13009Z7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 节能灯电路。 Purpose: High frequency electronic lighting ballast applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25℃) 2.0 W C P (Tc=25℃) 100 W C T 150 ℃ j

5.22. ksh13009a.pdf Size:203K _upd

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KSH13009A KSH13009A KSH13009A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Co

5.23. fjp13009.pdf Size:181K _upd

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March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter

5.24. ksh13009.pdf Size:227K _upd

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KSH13009 KSH13009 ◎ SEMIHOW REV.A1,Oct 2007 KSH130 009 KSH13009 Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 100 Watts TO-220

5.25. wbp13009-k.pdf Size:328K _upd

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WBP13009-K WBP13009-K WBP13009-K WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par

5.26. ksh13009f.pdf Size:224K _upd

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KSH13009F KSH13009F ◎ SEMIHOW REV.A1,Oct 2007 KSH130 009F KSH13009F Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 100 Watts TO-2

5.27. ksh13009af.pdf Size:191K _upd

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KSH13009AF KSH13009AF KSH13009AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector

5.28. ksh13009l.pdf Size:219K _upd

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KSH13009L ◎ SEMIHOW REV.A0,May 2003 KSH13009L KSH13009L Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 100 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector C

5.29. mj13009.pdf Size:82K _upd

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5.30. ksh13009al.pdf Size:459K _upd

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KSH13009AL ◎ SEMIHOW REV.A1,Oct 2007 KSH13009AL KSH13009AL Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25℃ unless otherwise noted 130 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base

5.31. mje13009.pdf Size:451K _motorola

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Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for highvoltage, highspeed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited

5.32. phe13009.pdf Size:47K _philips2

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS

5.33. mje13009.pdf Size:78K _st

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MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitt

5.34. sth13009.pdf Size:232K _st

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STH13009 High voltage fast-switching NPN power transistor Preliminary data . Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 Switching mode power supplies 2 1 TO-220 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram Multi Epitaxial Planar technology for high switching

5.35. st13009.pdf Size:177K _st

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ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Applications 2 1 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal

5.36. stw13009.pdf Size:195K _st2

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STW13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Application 2 1 Switch mode power supplies TO-247 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal sc

5.37. stwh13009.pdf Size:230K _st2

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STWH13009 High voltage fast-switching NPN power transistor . Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 Switching mode power supplies 2 1 TO-247 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram Multi Epitaxial Planar technology for high switching speeds anh high

5.38. fjp13009.pdf Size:123K _fairchild_semi

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March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 40

5.39. fja13009.pdf Size:194K _fairchild_semi

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October 2008 FJA13009 High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode Applications TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 V CEO VEBO Emitter-Base Voltage 9 V IC Collector Curr

5.40. fjpf13009.pdf Size:134K _fairchild_semi

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December 2007 FJPF13009 NPN Silicon Transistor High Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitte

5.41. kse13009f.pdf Size:25K _samsung

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KSE13009F NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220F High Speed Switching Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 12 A Collector Current (Pulse) IC 24 A Ba

5.42. mje13009-d.pdf Size:189K _onsemi

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MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http://onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN SILI

5.43. mje13009d.pdf Size:183K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lights

5.44. mje13009.pdf Size:448K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Re

5.45. mje13009-k.pdf Size:440K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

5.46. mje13009-p.pdf Size:424K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi

5.47. ts13009.pdf Size:272K _taiwansemi

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 TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

5.48. ts13009 a07.pdf Size:274K _taiwansemi

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TS13009 High Voltage NPN Transistor TO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram ? High Voltage ? High Speed Switching Structure ? Silicon Triple Diffused Type ? NPN Silicon Transistor Ordering Information Part No. Package Packing TS13009CZ C0 T

5.49. mje13009.pdf Size:272K _kec

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SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V

5.50. mje13009f.pdf Size:280K _kec

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SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V

5.51. mje13009.pdf Size:157K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitte

5.52. mje13009f.pdf Size:143K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE13009F DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit

5.53. mjf13009.pdf Size:143K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJF13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7?s(Max.)@ IC= 8.0A APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit,

5.54. 3dd13009.pdf Size:198K _lge

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3DD13009(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Continuous

5.55. hmje13009a.pdf Size:55K _hsmc

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Spec. No. : HE200206 HI-SINCERITY Issued Date : 2002.02.01 Revised Date : 2006.07.04 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay driver

5.56. mje13009a 1.pdf Size:207K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列

5.57. mje13009.pdf Size:206K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE /MJE SERIES TRANSISTORS MJE13009 NPN MJE 系列

5.58. mje13009a.pdf Size:252K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE 系列

5.59. 3dd13009k.pdf Size:327K _jilin_sino

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NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K 主要参数 MAIN CHARACTERISTICS 封装 Package IC 12A VCEO 400V PC(TO-220C) 100W PC(TO-3PB) 120W 用途 APPLICATIONS 节能灯 Energy-saving light 电子镇流器 Electronic ballasts 高频开关电源 High frequency switching power 高频功率变换 supply

5.60. mje13009zj.pdf Size:450K _blue-rocket-elect

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MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220S 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220S Plastic Package. 特征 / Features 高电压,大电流。 High VCEO High IC. , 用途 / Applications 用于高频电子照明电路。 High frequency electronic lighting ballast applications. 内部等效电路 / Equ

5.61. ksh13009w.pdf Size:141K _shantou-huashan

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N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13009W █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-263(D2PAK) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature………

5.62. 3dd13009 an.pdf Size:155K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 AN 产品概述 特征参数 产品特点 3DD13009 AN 是硅 NPN ● 开关损耗低 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管,该产品 VCEO 400 V ● 高温特性好 IC 12 A 采用平面工艺,分压环终端 ● 反向击穿电压高 Ptot (TC=25℃) 120 W 结构和少

5.63. 3dd13009 c8.pdf Size:154K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 C8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13009 C8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 12 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (TC=25℃) 100 W 结构

5.64. 3dd13009 a8.pdf Size:153K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 A8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13009 A8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 12 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot (TC=25℃) 100 W 结构

5.65. 3dd13009 x8d.pdf Size:154K _crhj

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 X8D 产品概述 特征参数 产品特点 3DD13009 X8D 是硅 ● 开关损耗低 符 号 额定值 单 位 ● 反向漏电流小 VCEO 200 V NPN 型功率开关晶体管,该 ● 高温特性好 IC 12 A 产品采用平面工艺, 分压环 ● 合适的开关速度 Ptot (TC=25℃) 100 W 终端结构和

5.66. 3dd13009an.pdf Size:159K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 AN 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13009 AN 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管,该产品 VCEO 400 V ● 高温特性好 IC 12 A 采用平面工艺,分压环终端 ● 反向击穿电压高 Ptot (TC=25℃) 120 W 结构和

5.67. 3dd13009a8.pdf Size:153K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 A8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13009 A8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 12 A 采用平面工艺, 分压环终端 ● 反向击穿电压高 Ptot (TC=25℃) 100 W 结构

5.68. 3dd13009x8d.pdf Size:155K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 X8D 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13009 X8D 是硅 符 号 额定值 单 位 ● 反向漏电流小 VCEO 200 V NPN 型功率开关晶体管,该 ● 高温特性好 IC 12 A 产品采用平面工艺, 分压环 ● 合适的开关速度 Ptot (TC=25℃) 100 W 终端结构

5.69. 3dd13009.pdf Size:198K _china

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 3DD13009(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Contin

5.70. 3dd13009c8.pdf Size:153K _china

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硅三重扩散 NPN 双极型晶体管 R ○ 3DD13009 C8 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13009 C8 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 型功率开关晶体管, VCEO 400 V 该产品 ● 高温特性好 IC 12 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (TC=25℃) 100 W 结构

5.71. p13009a.pdf Size:113K _jdsemi

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R P13009A 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FE

5.72. 13009a.pdf Size:113K _jdsemi

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R 13009A 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEA

5.73. 13009.pdf Size:114K _jdsemi

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R 13009 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEAT

5.74. 13009sdl.pdf Size:121K _jdsemi

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R 13009SDL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2

5.75. p13009.pdf Size:115K _jdsemi

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R P13009 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 Computer Switch Power Supply 2. 2. 2.FEA

Otros transistores... 13005S , 13005SD , 13005SDL , 13007DL , 13007S , 13007T , 13009A , 13009SDL , 2SA1015 , 3866S , 3866SF , B647 , B772P , B772PC , BU102D , BU102S , BU103AD .

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