13009T Specs and Replacement
Type Designator: 13009T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 95 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 11 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
13009T Substitution
- BJT ⓘ Cross-Reference Search
13009T datasheet
R 13009T www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEA... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
... See More ⇒
Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high voltage, high speed power switching inductive 100 WATTS circuits where fall time is critical. They are particularl... See More ⇒
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITI... See More ⇒
STW13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Application 2 1 Switch mode power supplies TO-247 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure 1... See More ⇒
STWH13009 High voltage fast-switching NPN power transistor . Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 Switching mode power supplies 2 1 TO-247 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram Multi Epitaxial Planar technology for high switching speed... See More ⇒
STH13009 High voltage fast-switching NPN power transistor Preliminary data . Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 Switching mode power supplies 2 1 TO-220 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram Multi Epitaxial Planar technology for high ... See More ⇒
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Em... See More ⇒
ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Applications 2 1 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high Figure... See More ⇒
October 2008 FJA13009 High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode Applications TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 V CEO VEBO Emitter-Base Voltage 9 V IC Collec... See More ⇒
March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25 C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter ... See More ⇒
December 2007 FJPF13009 NPN Silicon Transistor High Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25 C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collec... See More ⇒
KSE13009F NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220F High Speed Switching Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 12 A Collector Current (Pulse) IC 24... See More ⇒
FJA13009 High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor Control TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Co... See More ⇒
MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are http //onsemi.com particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, 12 AMPERE Solenoid/Relay drivers and Deflection circuits. NPN S... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fjpf13009h1tu fjpf13009h2tu.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Sole... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Sole... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13009D is intended to be used in a energy-saving lig... See More ⇒
TS13009 High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1... See More ⇒
TS13009 High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1... See More ⇒
SEMICONDUCTOR MJE13009F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V... See More ⇒
SEMICONDUCTOR MJE13009 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 700 V ... See More ⇒
3DD13009(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Contin... See More ⇒
Spec. No. HE200206 HI-SINCERITY Issued Date 2002.02.01 Revised Date 2006.07.04 MICROELECTRONICS CORP. Page No. 1/6 HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay dri... See More ⇒
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE ... See More ⇒
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE /MJE SERIES TRANSISTORS MJE13009A NPN MJE ... See More ⇒
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009E MAIN CHARACTERISTICS Package I 12A C V 400V CEO P (TO-220C) 100W C P (TO-3PB) 120W C TO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre... See More ⇒
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications . ... See More ⇒
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications. ... See More ⇒
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications. ... See More ⇒
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit ... See More ⇒
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications . ... See More ⇒
MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ... See More ⇒
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit ... See More ⇒
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W ... See More ⇒
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W ... See More ⇒
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W ... See More ⇒
R 13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEA... See More ⇒
R P13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FE... See More ⇒
R 13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEAT... See More ⇒
R P13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEA... See More ⇒
SBP13009-K SBP13009-K SBP13009-K SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter... See More ⇒
SBW13009-K SBW13009-K SBW13009-K SBW13009-K High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Param... See More ⇒
SBW13009-O SBW13009-O SBW13009-O SBW13009-O High voltage Fast Switching NPN Power Transistor Features Very High Switching Speed High voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para... See More ⇒
SBP13009-S SBP13009-S SBP13009-S SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para... See More ⇒
SBW13009-S SBW13009-S SBW13009-S SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Param... See More ⇒
SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C... See More ⇒
WBP13009-K WBP13009-K WBP13009-K WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par... See More ⇒
SBF13009-O SBF13009-O SBF13009-O SBF13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G... See More ⇒
TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw... See More ⇒
MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j ... See More ⇒
MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j ... See More ⇒
KSH13009L SEMIHOW REV.A0,May 2003 KSH13009L KSH13009L Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector C... See More ⇒
KSH13009AF KSH13009AF KSH13009AF Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector... See More ⇒
KSH13009A KSH13009A KSH13009A Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Co... See More ⇒
KSH13009 KSH13009 SEMIHOW REV.A1,Oct 2007 KSH130 009 KSH13009 Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-220 ... See More ⇒
KSH13009F KSH13009F SEMIHOW REV.A1,Oct 2007 KSH130 009F KSH13009F Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 100 Watts TO-2... See More ⇒
KSH13009AL SEMIHOW REV.A1,Oct 2007 KSH13009AL KSH13009AL Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 12 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 130 Watts TO-3P CHARACTERISTICS SYMBOL RATING UNIT 1. Base ... See More ⇒
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W ... See More ⇒
WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. M... See More ⇒
3DD13009AN NPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supply TO-3P Commonly power am... See More ⇒
isc Silicon NPN Power Transistor 3DD13009K DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
isc Silicon NPN Power Transistor MJE13009F DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are ... See More ⇒
isc Silicon NPN Power Transistor 3DD13009N DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
isc Silicon NPN Power Transistor MJF13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒
isc Silicon NPN Power Transistor FJP13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;... See More ⇒
isc Silicon NPN Power Transistor 3DD13009NL DESCRIPTION High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving ligh High frequency switching power supply High frequency power transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Switching Time t = 0.7 s(Max.)@ I = 8.0A f C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig... See More ⇒
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;con... See More ⇒
Detailed specifications: 13005S , 13005SD , 13005SDL , 13007DL , 13007S , 13007T , 13009A , 13009SDL , D965 , 3866S , 3866SF , B647 , B772P , B772PC , BU102D , BU102S , BU103AD .
History: 12A02MH | 13007T | 2N1042-2 | 15C01SS-TL-E | 15C01M | 2KW8629
Keywords - 13009T pdf specs
13009T cross reference
13009T equivalent finder
13009T pdf lookup
13009T substitution
13009T replacement
History: 12A02MH | 13007T | 2N1042-2 | 15C01SS-TL-E | 15C01M | 2KW8629
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent | p0903bdg