BU102D
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU102D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 700
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 9
V
Corriente del colector DC máxima (Ic): 1.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5
MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar BU102D
BU102D
Datasheet (PDF)
..1. Size:110K jdsemi
bu102d.pdf
RBU102D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent Lamp and Switch-mode power supplies 222FEATURES 2 High vo
9.1. Size:177K can-sheng
bu102s to-92.pdf
ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate T
9.2. Size:223K can-sheng
bu102 to-92.pdf
ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate T
9.3. Size:107K jdsemi
bu102s.pdf
RBU102S www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampCharger and Switch-mode power supplies 222FEATURES 2
9.4. Size:108K jdsemi
bu102.pdf
RBU102 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22
9.5. Size:203K inchange semiconductor
bu102.pdf
isc Silicon NPN Power Transistor BU102UIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE(sat) CWith TO-3 Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.