2N652A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector Em

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector Emitter Voltage VCEO 250 300 350 Vdc Collector

June 2009 2N6520 PNP Epitaxial Silicon Transistor Features High Voltage Transistor Collector-Emitter Voltage VCBO= -350V Collector Dissipation PC (max)=625mW Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitte

2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ

NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http //onsemi.com Voltage and Current are Negative for PNP Transistors COLLECTOR These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage V

2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES High voltage transistors TO-92 G H Collector J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 E C F G 1.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N6520 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. BASE Complement to 2N6517 3. COLLECTOR Equivalent Circuit 2N6520=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code

SEMICONDUCTOR 2N6520 TECHNICAL DATA B C 2N6520 TRANSISTOR (PNP) DIM MILLIMETERS FEATURES A 4.70 MAX E B 4.80 MAX G C 3.70 MAX Complement to 2N6517 D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) TO-92 Symbol Parameter Value Unit VCBO Collect