2N652A Datasheet. Specs and Replacement

Type Designator: 2N652A  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 30 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 1.2 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO5

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2N652A datasheet

 9.1. Size:329K  motorola

2n6515 2n6516 2n6517 2n6519 2n6520.pdf pdf_icon

2N652A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector Em... See More ⇒

 9.2. Size:229K  motorola

2n6515 2n6517 2n6519 2n6520.pdf pdf_icon

2N652A

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector Emitter Voltage VCEO 250 300 350 Vdc Collector... See More ⇒

 9.3. Size:156K  fairchild semi

2n6520.pdf pdf_icon

2N652A

June 2009 2N6520 PNP Epitaxial Silicon Transistor Features High Voltage Transistor Collector-Emitter Voltage VCBO= -350V Collector Dissipation PC (max)=625mW Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitte... See More ⇒

 9.4. Size:81K  samsung

2n6520.pdf pdf_icon

2N652A

2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ... See More ⇒

Detailed specifications: 2N6522, 2N6523, 2N6524, 2N6525, 2N6526, 2N6527, 2N6528, 2N6529, 2SA1943, 2N653, 2N6530, 2N6531, 2N6532, 2N6533, 2N6534, 2N6535, 2N6536

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