BU6084B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU6084B  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1400 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO220A

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BU6084B datasheet

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BU6084B

R BU6084B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hi

 0.1. Size:119K  jdsemi
 bu6084bf.pdf pdf_icon

BU6084B

R BU6084BF www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 H

 9.1. Size:205K  inchange semiconductor
 bu608.pdf pdf_icon

BU6084B

isc Silicon NPN Power Transistor BU608 DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.5 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMU

 9.2. Size:207K  inchange semiconductor
 bu608d.pdf pdf_icon

BU6084B

isc Silicon NPN Power Transistor BU608D DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.5 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIM

MOSTRAR MÁS

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