P13009A Todos los transistores

 ..1. Size:113K  jdsemi
 p13009a.pdf

R P13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FE

 8.1. Size:181K  fairchild semi
 fjp13009.pdf

March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25 C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter

 8.2. Size:283K  onsemi
 fjp13009tu fjp13009h2tu.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:115K  jdsemi
 p13009.pdf

R P13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Computer Switch Power Supply 2 2 2 FEA

 8.4. Size:316K  winsemi
 sbp13009k.pdf

SBP13009-K SBP13009-K SBP13009-K SBP13009-K HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter

 8.5. Size:417K  winsemi
 sbp13009s.pdf

SBP13009-S SBP13009-S SBP13009-S SBP13009-S High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Para

 8.6. Size:334K  winsemi
 sbp13009o.pdf

SBP13009-O SBP13009-O SBP13009-O SBP13009-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA B B B B C C C C

 8.7. Size:328K  winsemi
 wbp13009-k.pdf

WBP13009-K WBP13009-K WBP13009-K WBP13009-K High Voltage Fast- Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par

 8.8. Size:232K  inchange semiconductor
 fjp13009.pdf

isc Silicon NPN Power Transistor FJP13009 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p