P13009A Datasheet, Equivalent, Cross Reference Search
Type Designator: P13009A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3PB
P13009A Transistor Equivalent Substitute - Cross-Reference Search
P13009A Datasheet (PDF)
p13009a.pdf
RP13009A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FE
fjp13009.pdf
March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter
fjp13009tu fjp13009h2tu.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
p13009.pdf
RP13009 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Computer Switch Power Supply 222FEA
sbp13009k.pdf
SBP13009-KSBP13009-KSBP13009-KSBP13009-KHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter
sbp13009s.pdf
SBP13009-SSBP13009-SSBP13009-SSBP13009-SHigh Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Para
sbp13009o.pdf
SBP13009-OSBP13009-OSBP13009-OSBP13009-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOABBBBCCCC
wbp13009-k.pdf
WBP13009-KWBP13009-KWBP13009-KWBP13009-KHigh Voltage Fast- Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedSwitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par
fjp13009.pdf
isc Silicon NPN Power Transistor FJP13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
