2SA1871 Todos los transistores

DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT mm) voltage switching and is ideal for use in switching elements such as switching regulators and DC/DC converters. FEATURES New package with dimensions in between those of small signal

SMD Type Transistors PNP Transistors 2SA1871 1.70 0.1 Features High voltage Fast switching speed Complementary transistor with 2SC4942 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -600 Collector - Emitter Voltage VCEO -600 V Emitter - Base Voltage VEBO -7

2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current V = -50 V, I = -150 mA (max) CEO C High h FE Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2SC4944 Maximum R

Ordering number ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features Package Dimensions High fT fT=400MHz(typ). unit mm High breakdown voltage VCEO 200V(min). 2045B Large current capacitance. [2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle

Transistors 2SA1870 (96-113-A325) 308

JMnic Product Specification Silicon PNP Power Transistors 2SA1878 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1876 Case E-pack (TE3T8) Unit mm -3A PNP RATINGS

SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1877 Case E-pack Unit mm (TE5T8) -5A PNP RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -80 V Emitter to Base Voltage VEBO -7 V Collector

SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1879 Case ITO-220 Unit mm (TP7T8) -7A PNP RATINGS

2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features SOT-353 Small package (dual type) High voltage and high current High hFE Excellent hFE linearity 1 Complementary to 2SC4944 MARKING SY SGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO -50 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage VEBO Emitter-Base Volta

SMD Type Transistors PNP Transistors 2SA1875 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High fT fT=400MHz(typ). High breakdown voltage 0.127 +0.1 Large current capacitance. 0.80-0.1 max Complements to 2SC4976 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratin

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1878 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -2.5A CE(sat) C Large Current Capability-I = -5A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1879 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -3.5A CE(sat) C Large Current Capability-I = -7A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver