DATA SHEETSILICON TRANSISTOR2SA1871PNP SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching and is ideal for use in switching elements suchas switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of small signal

SMD Type TransistorsPNP Transistors2SA18711.70 0.1 Features High voltage Fast switching speed Complementary transistor with 2SC49420.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -600 Collector - Emitter Voltage VCEO -600 V Emitter - Base Voltage VEBO -7

2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = -50 V, I = -150 mA (max) CEO C High h FE Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2SC4944 Maximum R

Ordering number : ENN5507B2SA1875 / 2SC4976PNP / NPN Epitaxial Planar Silicon Transistors2SA1875 / 2SC4976High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz(typ). unit : mm High breakdown voltage : VCEO200V(min). 2045B Large current capacitance.[2SA1875 / 2SC4976] Small reverse transfer capacitance and excelle

Transistors 2SA1870(96-113-A325)308

JMnic Product Specification Silicon PNP Power Transistors 2SA1878 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon PNP Power Transistors 2SA1879 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1876 Case : E-pack(TE3T8)Unit : mm-3A PNPRATINGS

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1877 Case : E-pack Unit : mm(TE5T8)-5A PNPRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO -80 VCollector to Emitter Voltage VCEO -80 VEmitter to Base Voltage VEBO -7 VCollector

SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1879 Case : ITO-220Unit : mm(TP7T8)-7A PNPRATINGS

2SA1873 DUAL TRANSISTOR (PNP+ PNP) Features SOT-353 Small package (dual type) High voltage and high current High hFE Excellent hFE linearity 1 Complementary to 2SC4944 MARKING: SY SGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -50 VCollector-Base Voltage VCEO -50 VCollector-Emitter Voltage VEBO Emitter-Base Volta

SMD Type TransistorsPNP Transistors2SA1875TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High fT : fT=400MHz(typ). High breakdown voltage0.127+0.1 Large current capacitance.0.80-0.1max Complements to 2SC4976+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratin

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1878DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -2.5ACE(sat) CLarge Current Capability-I = -5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1879DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -3.5ACE(sat) CLarge Current Capability-I = -7ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver