MJD13002 Todos los transistores

SMD Type Transistors NPN Transistors MJD13002 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Power Switching Applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitter - B

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTOR MJD13003 DPAK (TO-252) Plastic Package Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 400 V Collector Emitter Voltage VCEV 700 V Emit

SMD Type Transistors NPN Transistors MJD13001 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 Power switching applications 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emitter - Base

SMD Type Transistors NPN Transistors MJD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

isc Silicon NPN Power Transistor MJD13003 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.0(Max) @ I = 1.0A CE(sat) C APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulato