MJD13002 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJD13002
SMD Transistor Code: 3002A_3002B_3002C_3002D_3002E_3002F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 9
Noise Figure, dB: -
Package: SOT23
MJD13002 Transistor Equivalent Substitute - Cross-Reference Search
MJD13002 Datasheet (PDF)
mjd13002.pdf
SMD Type TransistorsNPN TransistorsMJD13002SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Power Switching Applications1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 V Emitter - B
mjd13003.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTOR MJD13003DPAK (TO-252)Plastic PackageDesigned for High Voltage, High Speed Power Switching Inductive Circuits ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 400 VCollector Emitter Voltage VCEV 700 VEmit
mjd13001.pdf
SMD Type TransistorsNPN TransistorsMJD13001SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 Power switching applications1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emitter - Base
mjd13003.pdf
SMD Type TransistorsNPN TransistorsMJD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
mjd13003.pdf
isc Silicon NPN Power Transistor MJD13003DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulato
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N5971
