MMBTA45 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3*Collector-Emitter voltage: V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO*Collector current up to 300mA 1*Complement to UTC MMBTA94/93 2*Power Dissipation: P (max)=350mW DSOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa

SMD Type TransistorsNPN TransistorsMMBTA45 (KMBTA45)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Collector-Emitter Voltage1 2+0.1+0.05 Complement to MMBTA93 0.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA42LT1/DHigh Voltage Transistors*MMBTA42LT1NPN SiliconCOLLECTORMMBTA43LT13*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol MMBTA42 MMBTA43 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6EmitterBase

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA42NPN high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN high-voltage transistor MMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

MMBTA42Small signal NPN transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

October 2009MPSA42 / MMBTA42 / PZTA42NPN High Voltage AmplifierFeatures This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42CCE E C BB SOT-23TO-92SOT-223Mark: 1DE B CAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound. Complementary PNP Type: MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and

SMBTA42/MMBTA42NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage23 Complementary types: 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA42/MMBTA42 s1D SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit300 VCollector-emitter voltage VCEO

MMBTA43Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +1

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMBTA42Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon HighRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1

MMBTA44Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +1

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

MMBTA42LT1G,MMBTA43LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2Characteristic Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO VdcMMBTA42 300MMBTA43 2003Collector-Base Voltage VCBO VdcMMBTA42 300MMBTA43 200 12Emitter-B

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1BASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symbol Value

UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW Lead-free: MMBTA42L Halogen-free: MMBTA42G ORDERING INFORMA

UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 12* Collector-Emitter voltage: VCEO=300V(MMBTA42) SOT-23* Collector-Emitter voltage: VCEO=200V(MMBTA43) (JEDEC TO-236)* High current gain * Coll

MMBTA42WNPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42W120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10

MMBTA43 0.5A , 200V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA93 33Top ViewC B11 2MARKING 2K EABX DH JF GPACKAGE INFORMATION Package MPQ Leader Size Millimeter

MMBTA42NPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES High Voltage Transistor AL33MARKING Top View C B11 23D 2K EDPACKING INFORMATION Collector H JF GPackage MPQ Leader Size Millimeter MillimeterREF. REF.SOT-23 3K 7 in

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt

SEMICONDUCTOR MMBTA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA92/93._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

SEMICONDUCTOR MMBTA44TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.FEATURES High Breakdown Voltage.Collector Power Dissipation : PC=350mW.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-BaseVoltage 450 VVCEOCollector-EmitterVoltage 400 VVEBOEmitter-Base Voltage 6 VICCollector Current 300 mAPC *Collector Power Dissi

MMBTA43TRANSISTOR(NPN)SOT23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA93 1. BASE MARKING:ABX 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 200 V CBOV Collector-Emitter Voltage 200 V CEOV Emitter-Base Voltage 5 V EBOI Collector

MMBTA42TRANSISTOR(NPN)FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VI

MMBTA44TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT23 V Collector-Emitter Voltage 400 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current-Continuous 200 mAC I Collector Current -Pulsed 300

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA42 GMA43MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA42 GMA43 Collector-Emitter VoltageVCEO 300 200 Vdc-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA44MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collect

MMBTA42 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage

MMBTA44Transistor(NPN)SOT-23Features Power dissipation: PCM = 0.35W (Tamb=25) ICM = 0.2A Collector current: Collector-base voltage: V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg: -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co

MMBTA42MMBTA43COLLECTORHigh-Voltage NPN Transistor33Surface Mount11BASE2P b Lead(Pb)-Free2EMITTERSOT-23Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage MMBTA42 300VVCEO MMBTA43 200Collector-Base Voltage MMBTA42 300VVCBO MMBTA43 200Emitter-Base Voltage MMBTA42 6.0VEBO V MMBTA43 6.0C

MMBTA44COLLECTOR3High-Voltage NPN Transistor SOT-233Surface Mount1BASE1 22EMITTERMaximum RatingsRating Symbol Value UnitC ollector-E mitter V oltage V 400 VdcCEOC ollector-B ase V oltage VCBO 450 VdcE mitter-B as e V Oltage VEBO 6.0 VdcC ollector C urrent-C ontinuous IC300 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipat

FM120-M WILLASTHRUMMBTA4xLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VHigh Voltage TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H RoHS product for packing code suffix "G" Low profile surface moun

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1B

MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA92T(BR3CG92T)High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 VCollector Current IC 500 mAPowe

SEMICONDUCTORMMBTA42/43TECHNICAL DATAHigh Voltage TransistorsWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel2 MMBTA42LT3G1D SOT-23 10000/Tape&Reel1 MMBTA43LT1G M1E SOT-23 3000/Tape&ReelSOT-23 10000/Tape&Reel SOT23 MMBTA43LT3G M1

SEMICONDUCTORMMBTA42FTECHNICAL DATATRANSISTOR (NPN) MMBTA42FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A42 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

SEMICONDUCTORMMBTA44TECHNICAL DATANPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of product compliance with RoHS requirements.3Description2The MMBTA44 is designed for application that requires high voltage. 1Features SOT 23 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to MMBTA94COLLECTOR3DEVICE MARKING 1MMBTA44 = 3DB

SMD Type TransistorsNPN TransistorsMMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA3 NPN high voltage transistorsCOLLECTOR1BASE1 Base2 Emitter3 Collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30

SMD Type TransistorsNPN Transistors MMBTA42 (KMBTA42)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 High breakdown voltage3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

SMD Type TransistorsNPN TransistorsMMBTA44 (KMBTA44)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Collector-Emitter Voltage1 2+0.1+0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

MMBTA42NPN HIGH VOLTAGE TRANSISTOR300 Volt POWER 250 mWattVOLTAGEFEATURES0.120(3.04) NPN silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08)MECH

General Purpose TransistorMMBTA42-G (NPN)RoHS DeviceFeaturesSOT-23 -High breakdown voltage.0.119(3.00)0.110(2.80) -Low collector-emitter saturation voltage.3 -Ultra small surface mount package.0.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10)

MMBTA44General Purpose Transistors NPN SiliconProduct Summary VCEO 400V Ic200mA PC 350mWFEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25unless otherwise noted)AParameter Symbol Limit UnitCollector-Base Voltage 400 VVCBOCollector-Emitter Voltage 400 V VCEOEmitter-Base Voltage VEBO V6A

RUMW UMW MMBTA42SOT-23 Plastic-Encapsulate TransistorsDimensions In Millimeters Dimensions In InchesSymbolMin. Max. Min. Max.A 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.950 TYP. 0.037 TYP.e1 1.800 2.000

MMBTA42 High Voltage NPN TransistorPackage outlineFeatures High voltageSOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0

MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltageSOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3211. BASEMarking: 1D 2.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VCo

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT23 Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO3. COLLECTOR V Emitter-Base Voltage

MMBTA4 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking: 1DSymbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C

MMBTA4 4SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking: 3DSymbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current C200mA P Collector Power Dissipation 350 mW

MMBTA42SOT-23 Plastic-Encapsulate TransistorSOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage1. BASE Low collector-emitter saturation voltage2. EMITTER Complementary to MMBTA92 (PNP)3. COLLECTORMarking: 1D PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)

www.msksemi.comMMBTA44-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS1. BASEMARKING: 3D 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 400 V CEOV

www.msksemi.comMMBTA42-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP)1. BASE2. EMITTERSOT23 Marking: 1D 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VColl

MMBTA44 NPN Transistor FeaturesSOT-23 (TO-236) For High Voltage Switching and AmplifierApplications.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 500 V CBOCollector Emitter Voltage V 400 V CEOEmitter Base Voltage V 6 V EBOCollector Cur

Jingdao Microelectronics co.LTD MMBTA42MMBTA42SOT-23NPN TRANSISTOR3FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASEParameter Symbol Value Unit2.EMITTER3.COLLECTOR VCBOCollectorBase Vo

MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltageSOT-23 Complementary to MMBTA92 (PNP)1 BASE 2 EMITTER 3 COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValuealueCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO

MMBTA44SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA941. BASEMARKING: 3D 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Co

MMBTA42 SOT-23 NPN Transistors32 1.Base Features2.Emitter High breakdown voltage1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 300Collector - Emitter Voltage VCEO 300 VEmitter - Base V

MMBTA42 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBTA92 Collector Current: Ic=0.5A High breakdown voltage Low collector-emitter saturation voltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 300 VCollector-Base VoltageVCEO 300 VCollector-Emitter Volta

MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

RoHS RoHSCOMPLIANT COMPLIANTMMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

RoHS RoHSCOMPLIANT COMPLIANTMMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VVCEO Collector-Emitter Voltage 3

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter VoltageVCEO 300 200 Vdc-Collector-Base VoltageVCBO 300 200 Vdc-Emitter-Base VoltageVEBO 6.0 6.0

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA44 MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collector-Base Voltage - VCBO 400 VVEBOEmitter-Base Voltage - 7 VCollector Current

MMBTA42NPN GENERAL PURPOSE SWITCHING TRANSISTOR300Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V.Collector current IC=0.3A.ansition frequency fT>50MHz @ TrIC=10mAdc, VCE=20Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol

MMBTA42BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

MMBTA44BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A