MMBTA45 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA45 📄📄
Código: 3D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 350 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: SOT23
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MMBTA45 datasheet
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mmbta42 2.pdf
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mmbta44.pdf
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mmbta42lt3g.pdf
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
mmbta42lt1g.pdf
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MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 Characteristic Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 3 Collector-Base Voltage VCBO Vdc MMBTA42 300 MMBTA43 200 1 2 Emitter-B
mmbta42lt smmbta42l mmbta43l.pdf
MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Value
mmbta42.pdf
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UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 1 2 * Collector-Emitter voltage VCEO=300V(MMBTA42) SOT-23 * Collector-Emitter voltage VCEO=200V(MMBTA43) (JEDEC TO-236) * High current gain * Coll
mmbta42w.pdf
MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42W 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10
mmbta43.pdf
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mmbta42.pdf
MMBTA42 NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
mmbta44.pdf
MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING Top View C B 1 1 2 3D 2 K E D PACKING INFORMATION Collector H J F G Package MPQ Leader Size Millimeter Millimeter REF. REF. SOT-23 3K 7 in
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base
mmbta44.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt
mmbta42 mmbta43.pdf
SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA92/93. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1
mmbta44.pdf
SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-BaseVoltage 450 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC * Collector Power Dissi
mmbta43.pdf
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mmbta44.pdf
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mmbta44.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA44 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 V Collector-Emitter Voltage - Collect
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mmbta42-43.pdf
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mmbta44.pdf
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mmbta42f.pdf
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mmbta44.pdf
SMD Type Transistors NPN Transistors MMBTA44 (KMBTA44) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Collector-Emitter Voltage 1 2 +0.1 +0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E
mmbta42.pdf
MMBTA42 NPN HIGH VOLTAGE TRANSISTOR 300 Volt POWER 250 mWatt VOLTAGE FEATURES 0.120(3.04) NPN silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) MECH
mmbta42-g.pdf
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mmbta44.pdf
MMBTA44 General Purpose Transistors NPN Silicon Product Summary VCEO 400V I c 200mA PC 350mW FEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Collector-Base Voltage 400 V VCBO Collector-Emitter Voltage 400 V VCEO Emitter-Base Voltage VEBO V 6 A
mmbta42.pdf
R UMW UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000
mmbta42.pdf
MMBTA42 High Voltage NPN Transistor Package outline Features High voltage SOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0
mmbta42.pdf
MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3 2 1 1. BASE Marking 1D 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Co
mmbta44.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT 23 Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO 3. COLLECTOR V Emitter-Base Voltage
mmbta42.pdf
MMBTA4 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking 1D Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C
mmbta44.pdf
MMBTA4 4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking 3D Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current C 200 mA P Collector Power Dissipation 350 mW
mmbta42.pdf
MMBTA42 SOT-23 Plastic-Encapsulate Transistor SOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs)
mmbta44-ms.pdf
www.msksemi.com MMBTA44-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS 1. BASE MARKING 3D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V
mmbta42-ms.pdf
www.msksemi.com MMBTA42-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP) 1. BASE 2. EMITTER SOT 23 Marking 1D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Coll
mmbta44.pdf
MMBTA44 NPN Transistor Features SOT-23 (TO-236) For High Voltage Switching and Amplifier Applications. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 500 V CBO Collector Emitter Voltage V 400 V CEO Emitter Base Voltage V 6 V EBO Collector Cur
mmbta42.pdf
Jingdao Microelectronics co.LTD MMBTA42 MMBTA42 SOT-23 NPN TRANSISTOR 3 FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Parameter Symbol Value Unit 2.EMITTER 3.COLLECTOR VCBO Collector Base Vo
mmbta42.pdf
MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage SOT-23 Complementary to MMBTA92 (PNP) 1 BASE 2 EMITTER 3 COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value alue Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO
mmbta44.pdf
MMBTA44 SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 1. BASE MARKING 3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Co
mmbta42 mmbta42-l.pdf
MMBTA42 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter High breakdown voltage 1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base V
mmbta42l.pdf
MMBTA42 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBTA92 Collector Current Ic=0.5A High breakdown voltage Low collector-emitter saturation voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 300 V Collector-Base Voltage VCEO 300 V Collector-Emitter Volta
mmbta42.pdf
MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
mmbta44.pdf
MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
mmbta42.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit
mmbta44.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit
mmbta42.pdf
SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V VCEO Collector-Emitter Voltage 3
mmbta42 mmbta43.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter Voltage VCEO 300 200 Vdc - Collector-Base Voltage VCBO 300 200 Vdc - Emitter-Base Voltage VEBO 6.0 6.0
mmbta42.pdf
MMBTA42 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 300Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V. Collector current IC=0.3A. ansition frequency fT>50MHz @ Tr IC=10mAdc, VCE=20Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol
mmbta42.pdf
MMBTA42 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A
mmbta44.pdf
MMBTA44 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A
Otros transistores... 3DD13003E, 3DD13003F, CXTA44, KSU13003H, KX2000N, KX2001P, MJD13001, MJD13002, 2N3055, NJM13003-1.63, 2SA1385-Z, 2SA2071-Q, 2SB1070A, 2SB1169A, 2SB1172A, 2SB1571, 2SB1572
Parámetros del transistor bipolar y su interrelación.
History: 3DA5200B | 2SD1616AG | 2N3126 | MJE13002F2
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