2SB1628 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETSILICON TRANSISTOR2SB1628PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT: mm)and is ideal for DC/DC converters and mortor drivers.FEATURES High current capacitance Low collector saturation voltageQUALITY GRADES StandardPlease re

SMD Type TransistorsPNP Transistors2SB16281.70 0.1 Features High current capacitance Low collector saturation voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - C

Power Transistors2SB1623Silicon PNP epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV1.40.22.60.11.60.2 Absolute Maximum Ratings Ta = 25C0.8

Power Transistors2SB1623ASilicon PNP epitaxial planar typeFor power amplificationUnit: mm4.60.29.90.32.90.2 Features 3.20.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV Absolute Maximum Ratings Ta = 25C1.40.22.60.11.60.2Pa

Power Transistors2SB1629Silicon PNP epitaxial planar typeFor power amplificationUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1High foward current transfer ratio hFESatisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screw2.6 0.11.2 0.151.45 0.15

JMnic Product SpecificationSilicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION With TO-3PML package Complement to type 2SD2494 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterMaximum absolute ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION With TO-220F package Complement to type 2SD2495 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CON

E(70)BDarlington 2SB1625Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1625 Symbol Conditions 2SB1625 UnitUnit0.20.2 5.515.6VCBO 110 ICBO VCB=

E(70)BDarlington 2SB1624Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2493)Application : Audio, Series Regulator and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25C)Symbol 2SB1624 Symbol Conditions 2SB1624Unit Unit0.24.80.415.6VCBO 110 ICBO VCB=

E(70)BDarlington 2SB1626Equivalent circuit CSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495)Application : Audio, Series Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1626 Symbol Conditions 2SB1626 UnitUnit0.24.20.210.1VCBO 110 ICBO VCB=

isc Silicon PNP Darlington Power Transistor 2SB1625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2494Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general pur

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2493Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatioAPPLICATIONSDesigned for audio,series re

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1626DESCRIPTIONHigh DC Current GainLow-Collector Saturation VoltageComplement to Type 2SD2495Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio,series regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM