2SB1628 Datasheet. Equivalente

 ..1. Size:125K  nec
 2sb1628.pdf

DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension PACKAGE DRAWING (UNIT mm) and is ideal for DC/DC converters and mortor drivers. FEATURES High current capacitance Low collector saturation voltage QUALITY GRADES Standard Please re

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 2sb1628.pdf

SMD Type Transistors PNP Transistors 2SB1628 1.70 0.1 Features High current capacitance Low collector saturation voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - C

 8.1. Size:76K  panasonic
 2sb1623.pdf

Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings Ta = 25 C 0.8

 8.2. Size:76K  panasonic
 2sb1623a.pdf

Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV Absolute Maximum Ratings Ta = 25 C 1.4 0.2 2.6 0.1 1.6 0.2 Pa

 8.3. Size:53K  panasonic
 2sb1629.pdf

Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15

 8.4. Size:163K  jmnic
 2sb1625.pdf

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1625 DESCRIPTION With TO-3PML package Complement to type 2SD2494 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 8.5. Size:154K  jmnic
 2sb1626.pdf

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1626 DESCRIPTION With TO-220F package Complement to type 2SD2495 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CON

 8.6. Size:25K  sanken-ele
 2sb1625.pdf

E (70 ) B Darlington 2SB1625 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494) Application Audio, Series Regulator and General Purpose External Dimensions FM100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SB1625 Symbol Conditions 2SB1625 Unit Unit 0.2 0.2 5.5 15.6 VCBO 110 ICBO VCB=

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 2sb1624.pdf

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 2sb1626.pdf

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 2sb1625.pdf

isc Silicon PNP Darlington Power Transistor 2SB1625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2494 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general pur

 8.10. Size:203K  inchange semiconductor
 2sb1624.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1624 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -110V(Min) (BR)CEO Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2493 Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS Designed for audio,series re

 8.11. Size:198K  inchange semiconductor
 2sb1626.pdf

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1626 DESCRIPTION High DC Current Gain Low-Collector Saturation Voltage Complement to Type 2SD2495 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM