BC808A Todos los transistores

SMD Type Transistors PNP Transistors BC808A (KC808A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 For general AF applications. High collector current. High current gain. 1 2 +0.1 +0.05 Low collector-emitter saturation voltage. 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 Complementary NPN type available(BC818A) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta

BC807/BC808 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages 3 Complement to BC817/BC818 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC807 -50 V BC808 -30 V VCEO Collector-

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for AF-Driver stages and low power output stages Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC807 VCES -50 V BC808 -30 V Collector Emitter Voltage BC807 VCEO -45 V BC808 -25 V Emitter-Base Voltage

SOT23 PNP SILICON PLANAR BC807 MEDIUM POWER TRANSISTORS BC808 ISSUE 4 JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DIT

BC808-25LT1G, SBC808-25LT1G, BC808-40LT1G General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 Features AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER 3 MAXIMUM RATINGS

BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -25 V 3 Collector - Base Voltage VCBO -30 V 1 Emitter - Base Voltage VEBO -5.0 V 2 Collector Current -

BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon www.onsemi.com Features COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U

BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -25 V 3 Collector - Base Voltage VCBO -30 V 1 Emitter - Base Voltage VEBO -5.0 V 2 Collector Current -

BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon www.onsemi.com Features COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U

UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 BC807G-xx-AE3-R SOT-23 E B C Tape Reel BC807G-xx-AL3-R SOT-323 E B C Tape Reel BC808G-xx-A

BC808F PNP Silicon Transistor Descriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC818F Ordering Information Type NO. Marking Package Code MA BC808F SOT-23F Device Code hFE Rank Year&W

BC808 PNP Silicon Transistor Descriptions PIN Connection High current application Switching application C Features B Suitable for AF-Driver stage and E low power output stages Complementary pair with BC818 SOT-23 Ordering Information Type NO. Marking Package Code MA BC808 SOT-23 Device Code hFE Rank Year&Week Cod

BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors PNP PNP Si-Epitaxial PlanarTransistoren f r die Oberfl chenmontage Power dissipation Verlustleistung 225 mW 0.1 0.1 Plastic case SOT-323 2 1 0.3 3 Kunststoffgeh use Type Weight approx. Gewicht ca. 0.01 g Code 12 Plastic material has UL classification 94V-0 1.3 Geh usemat

BC808 -0.8A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-23 Suitable for AF-Driver stages and low power output stages A Complementary to BC818 L 3 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE(1) Product-Rank BC808-16 BC808-25 BC808-40 D Range 100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistor Marking BC807 = 5D BC807 16 = 5A BC807 25 = 5B BC807-40 = 5C BC808 = 5H BC808 16 = 5E BC808 25 = 5F BC808 40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOL

BC808 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE Suitable for AF-Driver stages and low power output stages 2. EMITTER 3. COLLECTOR Complement to BC818 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units -30 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous

BC808 SOT-23 Transistor (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Suitable for AF-Driver stages and low power output stages Complement to BC818 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) -30 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Volta

BC808 COLLECTOR PNP Transistor Surface Mount 3 SOT-23 3 P b Lead(Pb)-Free 1 BASE 1 FEATURES 2 2 EMITTER * Suitable for AF-Driver stages and low power output stages * Complement to BC818 Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -25 V CEO Collector-Base Voltage VCBO -30 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC A -0.8 T

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A

SMD Type Transistors PNP Transistors BC808 (KC808) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High collector current. High current gain. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage. +0.1 1.9 -0.1 Complementary NPN type available(BC818) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni

BC807/BC808-16/-25/-40 PNP Transistor Features SOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 , unless otherwisenoted) A Pa