SMD Type TransistorsPNP TransistorsBC808A (KC808A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1Features3For general AF applications.High collector current.High current gain.1 2+0.1+0.05Low collector-emitter saturation voltage.0.95 -0.1 0.1 -0.01+0.11.9-0.1 Complementary NPN type available(BC818A)1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta

BC807/BC808Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages3 Complement to BC817/BC8182SOT-2311. Base 2. Emitter 3. Collector PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC807 -50 V: BC808 -30 VVCEO Collector-

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for AF-Driver stages and low power output stages Complement to BC817/BC818ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC807 VCES -50 V:BC808 -30 VCollector Emitter Voltage :BC807 VCEO -45 V:BC808 -25 VEmitter-Base Voltage

SOT23 PNP SILICON PLANARBC807MEDIUM POWER TRANSISTORSBC808ISSUE 4 JUNE 1996 T I D T I 8 D 8 8 E 8 8 8 C 8 8 8 8 8 8 B T T 8 8 8 8 8 8SOT23ABSOLUTE MAXIMUM RATINGS. T 8 8 8 IT II V I V V II i V I V V i V I V V I I i II I I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DIT

BC808-25LT1G,SBC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantEMITTER3MAXIMUM RATINGS

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U

UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3BC807G-xx-AE3-R SOT-23 E B C Tape ReelBC807G-xx-AL3-R SOT-323 E B C Tape ReelBC808G-xx-A

BC808FPNP Silicon TransistorDescriptions PIN Connection High current application Switching application 3 Features 1 Suitable for AF-Driver stage and low power output stages 2 SOT-23F Complementary pair with BC818F Ordering Information Type NO. Marking Package Code MA BC808F SOT-23F Device Code hFE Rank Year&W

BC808PNP Silicon TransistorDescriptions PIN Connection High current application Switching application C Features B Suitable for AF-Driver stage and Elow power output stages Complementary pair with BC818 SOT-23 Ordering Information Type NO. Marking Package Code MA BC808 SOT-23 Device Code hFE Rank Year&Week Cod

BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistorsPNP PNPSi-Epitaxial PlanarTransistoren fr die Oberflchenmontage Power dissipation Verlustleistung 225 mW0.1 0.1Plastic case SOT-3232 10.33 KunststoffgehuseTypeWeight approx. Gewicht ca. 0.01 gCode12Plastic material has UL classification 94V-01.3Gehusemat

BC808 -0.8A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-23 Suitable for AF-Driver stages and low power output stages A Complementary to BC818 L33Top View C B11 22K ECLASSIFICATION OF hFE(1) Product-Rank BC808-16 BC808-25 BC808-40 DRange 100~

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BC807BC808SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorMarkingBC807 = 5DBC80716 = 5ABC80725 = 5BBC807-40 = 5CBC808 = 5HBC80816 = 5EBC80825 = 5FBC80840 = 5GPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOL

BC808TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE Suitable for AF-Driver stages and low power output stages 2. EMITTER 3. COLLECTOR Complement to BC818 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units-30 VVCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous

BC808 SOT-23 Transistor (PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Suitable for AF-Driver stages and low power output stages Complement to BC818 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)-30 VVCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Volta

BC808COLLECTORPNP Transistor Surface Mount 3SOT-233P b Lead(Pb)-Free1BASE1FEATURES: 2 2EMITTER* Suitable for AF-Driver stages and low power output stages * Complement to BC818 Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -25 VCEOCollector-Base Voltage VCBO -30 VEmitter-Base Voltage VEBO -5 VCollector Current-Continuous ICA-0.8T

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A

SMD Type TransistorsPNP TransistorsBC808 (KC808)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh collector current.High current gain. 1 2+0.1+0.050.95 -0.1 0.1 -0.01Low collector-emitter saturation voltage.+0.11.9 -0.1 Complementary NPN type available(BC818)1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa