BC857T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BC856T; BC857T seriesPNP general purpose transistorsProduct specification 2000 Nov 15Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationPNP general purpose transistors BC856T; BC857T seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEETM3D173BC856T; BC857T seriesPNP general purpose transistorsProduct data sheet 2000 Nov 15Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetBC856T; BC857T PNP general purpose transistorsseriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 c

BC856T SERIESBC857T SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLEON FOL

BC857AT/BT/CT SOT-523 Transistor(PNP)SOT-5231. BASE 2. EMITTER 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO

SMD Type TransistorsPNP TransistorsBC857T (KC857T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Ideally suited for automatic insertion For Switching and AF Amplifier Applications30.30.050.5+0.1-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856AWT1/DGeneral Purpose TransistorsBC856AWT1,BWT1PNP SiliconBC857AWT1,BWT1COLLECTOR BC858AWT1,BWT1,These transistors are designed for general purpose amplifier3applications. They are housed in the SOT323/SC70 which is CWT1designed for low power surface mount applications.1Motorola Preferred DevicesB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856ALT1/DBC856ALT1,BLT1General Purpose TransistorsBC857ALT1,PNP SiliconCOLLECTORBLT1,CLT13BC858ALT1,BLT1,CLT11BASEMotorola Preferred Devices2EMITTERMAXIMUM RATINGSRating Symbol BC856 BC857 BC858 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1CollectorBase Voltage VCBO 80

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

DISCRETE SEMICONDUCTORSDATA SHEETM3D425BC856F; BC857F; BC858F seriesPNP general purpose transistors1999 May 21Preliminary specificationSupersedes data of 1998 Nov 10Philips Semiconductors Preliminary specificationPNP general purpose transistors BC856F; BC857F; BC858F seriesFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Low current (max. 10

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D187BC856W; BC857WPNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Apr 07Philips Semiconductors Product specificationPNP general purpose transistors BC856W; BC857WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 80)1 base S-mini package.

DISCRETE SEMICONDUCTORS DATA SHEETBC856; BC857; BC858PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 2003 Apr 09NXP Semiconductors Product data sheetPNP general purpose transistors BC856; BC857; BC858FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 collector G

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC857BVPNP general purpose double transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 10NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BVFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BC857BSPNP general purpose double transistorProduct data sheet 1999 Apr 26Supersedes data of 1997 Jul 09 NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 emitter TR1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC856; BC857PNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Apr 17Philips Semiconductors Product specificationPNP general purpose transistors BC856; BC857FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageMBD128BC857BSPNP general purpose doubletransistor1999 Apr 26Product specificationSupersedes data of 1997 Jul 09Philips Semiconductors Product specificationPNP general purpose double transistor BC857BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 emit

BC857BSMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBC857B 3F SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBC847BAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGEIN

BC857BWSMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBC857BW 3FW SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBC847BWAPPLICATIONS SOT-323 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

BC857BC858SMALL SIGNAL PNP TRANSISTORSType MarkingBC857A 3EBC857B 3FBC858A 3JBC858B 3K2 SILICON EPITAXIAL PLANAR PNPTRANSISTORS3 MINIATURE PLASTIC PACKAGE FOR1APPLICATION IN SURFACE MOUNTINGCIRCUITSSOT-23 VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBC857 BC8

BC857SE2B2C1C2SC70-6B1Mark: 3C pin #1 E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier canbe of either orientation and will not affect thefunctionality of the device.PNP Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 200 mA. Sourced from Pr

August 2006BC856- BC860tmPNP Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO

BC857XQA series45 V, 100 mA PNP general-purpose transistorsRev. 1 26 August 2015 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complementNexperia JEITA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB SOT883

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB S

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB SOT883

BC857QAS45 V, 100 mA PNP/PNP general-purpose transistor8 July 2015 Product data sheet1. General descriptionPNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847QAS.NPN/PNP complement: BC847QAPN.2. Features and benefits Reduces component count Reduces pick and place costs

BC857RA45 V, 100 mA PNP/PNP general-purpose double transistors14 September 2018 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847RANPN/PNP complement: BC847RAPN2. Features and benefits Reduces component count Reduces pick

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

BC856; BC857; BC85865 V, 100 mA PNP general-purpose transistorsRev. 7 16 April 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDECBC856 SOT23 TO-236AB BC846BC856A BC846ABC856B BC84

DISCRETE SEMICONDUCTORS DATA SHEETBC856; BC857; BC858PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 2003 Apr 09NXP Semiconductors Product data sheetPNP general purpose transistors BC856; BC857; BC858FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 collector G

PNP EPITAXIALBC856/857/858/859/860 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC859, BC860 Complement to BC846 ... BC850ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO:BC856 -80 V:BC857/860 -50 V:BC858/859 -30 VCollecto

PNP Silicon AF Transistors BC 856W ... BC 860WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,BC 849W, BC 850W (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 AW 3As Q62702-C2335 B E C SOT-323BC 856

BC 857SPNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors in one packageType Marking Ordering Code Pin Configuration PackageBC 857S 3Cs Q62702-2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollec

PNP Silicon AF Transistors BC 856 ... BC 860Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,BC 849, BC 850 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 A 3As Q62702-C1773 B E C SOT-23BC 856 B 3Bs Q6

PNP small signal transistor BC857B Features Dimensions (Unit : mm) 1) Ideal for switching and AF amplifier applications. BC857B2) High current gain. 2.9 0.950.4 0.45(3)Packaging specificationsPackage Taping(2) (1)Type Code T1160.95 0.950.151.9Basic ordering unit (pieces) 3000(1)EmitterBC857B(2)BaseEach lead has same dimensions(3)CollectorAb

BC857B HZGDatasheetPNP General purpose transistorAEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO-45VIC-100mASST3lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC847B HZGlApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape widt

Transistors BC857B(SPEC-A32)607

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

BC856AW - BC858CW PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automated Insertion SOT-323 Complementary NPN Types Available (BC846W-BC848W) CDim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 BED 0.65 Nominal

BC857BFA45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -45V Case: X2-DFN0806-3 IC = -100mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Leve

BC857AT, BT, CT 45V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -45V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = -100mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Ter

BC857BFZ 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -45V Case: X2-DFN0606-3 IC = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) ASOT-23 For Switching and AF Amplifier Applications CDim Min Max Qualified to AEC-Q101 Standards for High Reliability A 0.37 0.51 B C Lead

SOT23 PNP SILICON PLANAR BC856 BC857BC858 BC859GENERAL PURPOSE TRANSISTORSBC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-523 Complementary NPN Types Available (BC847AT,BT,CT) CDim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B CB 0.75 0.85 0.80 Qualified to AEC-Q101 Standards for High Reliability C 1.45 1.75

BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT-563 Complementary PNP Type Available (BC847BV) Case Material: Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

BC857BS45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound. For switching and AF Amplifier Application UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Not

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary NPN Types: BC846 BC848 Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

BC857BLP 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

BC856S/U_BC857SPNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according

BC856AW THRU BC858CWFeatures Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Tempera

M C CBC856ARMicro Commercial Components Micro Commercial ComponentsTHRU130 W Cochran St, Unit BSimi Valley, CA 93065BC858CTel:818-701-4933FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1 Ideally Suited for Au

BC857SFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junct

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC857BVMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Transistors

BC857BSFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junc

BC857A,BC857B,BC857CFeatures For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorCompliant. See Ordering Information)Maximum RatingsSOT-23 Operati

BC856AMCCMicro Commercial ComponentsTMTHRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC858CFax: (818) 701-4939FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC857BTT1, BC857CTT1Preferred DevicesGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR Pb-Free Package is Available*31BASEMAXIMUM RATINGS (TA = 25C)Rating Symbol Max Unit

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

BC856BWT1 Series,BC857BWT1 Series,BC858AWT1 SeriesGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SC--70/SOT--323 which isdesigned for low power surface mount applications. 1BASEFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS2

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC856BDW1T1G,BC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred DevicesDual General PurposeTransistorshttp://onsemi.comPNP Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Fr

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

BC856ALT1G Series,SBC856ALT1G SeriesGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGS

BC857PNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application C Features B High voltage : VCEO=-45V E Complementary pair with BC847 SOT-23 Ordering Information Type NO. Marking Package Code UA BC857 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum ratin

BC857FPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=-45V Complementary pair with BC847F 2 SOT-23F Ordering Information Type NO. Marking Package Code UA BC857F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum

BC857UFSemiconductor Semiconductor PNP Silicon TransistorDescriptions General purpose application Switching application Features High voltage : VCEO=-45V Complementary pair with BC847UF Ordering Information Type NO. Marking Package Code BC857UF BV SOT-323F : hFE rank Outline Dimensions unit : mm 1.95~2.25 1.20~1.40 1 3 2 PIN Connect

BC857UPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=-45V 2 Complementary pair with BC847U SOT-323 Ordering Information Type NO. Marking Package Code BV BC857U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ra

BC856 BC857 BC858PNP Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC856 BC857 BC858 UNITSDESCRIPTIONVCBOCollector Base Voltage 80 50 30 VCollector Emmitter Voltage (+VBE = 1V) VCEX80 50 30 VVCEOCollector Emitter Voltage 65 45 30

BC856A, BBC857A, B, CElektronische BauelementeBC858A, B, CA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-23nAGeneral Purpose Transistor PNP TypeDim Min MaxLnCollect current : - 0.1AA 2.800 3.040O OnOperating Temp. : -55 C ~ +150 C3 B 1.200 1.400STop ViewBnRoHS compliant product C 0.890 1.1101 2D 0.370 0.500V GG 1.780 2.040COLLE

BC856AW, BWBC857AW, BW, CWElektronische BauelementeBC858AW, BW, CWRoHS Compliant ProductFEATURES* Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323O O* Operating Temp. : -55 C ~ +150 C Dim Min MaxAA 1.800 2.200LB 1.150 1.350C OLLE C TOR 3C 0.800 1.000STop View3 B12 D 0.300 0.400G 1.200 1.4001V GH 0.000 0.

BC857SPNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REF* Features.053(1.35).096(2.45).045(1.15).085(2.15)Power dissipationOPCM : 0.3 W (Tamp.= 25 C).018(0.46).010(0.26)Collector current.014(0.35).006(0.15).006(0.15)ICM : -0.2 A .003(0.08).0

BC857BV Dual PNP Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-563 FEATURES A Epitaxial Die Construction Complementary NPN Types Available (BC847BV) B Ultra-Small Surface Mount Package MARKING JD G HK5V F ECPACKAGE INFORMATION Millimeter Millimeter REF. REF.

BC856A SERIESTaiwan SemiconductorSmall Signal Product200mW, PNP Small Signal TransistorFEATURES - Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) underplate- Pb free and RoHS compliant- Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date codeMECHANICA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858WSOT-323Formed SMD PackageMarkingBC856W =3D BC857AW =3EBC856AW =3A BC857BW =3FBC856BW =3B BC857CW =3GBC857W =3H BC858W =3MGeneral Purpose Switching and Amplification.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BC856 BC857BC858SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingPACKAGE OUTLINE DETAILSBC856 = 3D ALL DIMENSIONS IN mmBC856A = 3ABC856B = 3BBC857 = 3HBC857A = 3EBC857B = 3FBC857C = 3GBC858 = 3MBC858A = 3JBC858B = 3KBC858C = 3LPi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W TRANSISTOR (PNP) BC857W SOT-323 BC858W 1. BASE FEATURES 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsDUAL TRANSISTOR (PNP+PNP) BC857SIsolated Transistor and DiodeSOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistorsMARKING: 3C MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC856 TRANSISTOR (PNP) BC857 SOT-23 BC858 FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors BC857BV DUAL TRANSISTOR (PNP+PNP)SOT-563 FEATURES Epitaxial Die Construction Complementary NPN Types Available(BC847BV) Ultra-Small Surface Mount PackageMarking: K5V MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

www.jscj-elec.com AD-BC856/57/58 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC856/57/58 Series Plastic-Encapsulated Transistor AD-BC856/57/58 series Transistor (PNP) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC856-A =3A; AD-BC856-B =3B AD-BC857-A =3E; AD-BC8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

SEMICONDUCTOR BC856W/7W/8WTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2For Complementary With NPN Type BC846W/847W/848W. _+B 1.25 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.

SEMICONDUCTOR BC856/7/8TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15For Complementary With NPN Type BC846/847/848.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P P

BC857S Multi-Chip TRANSISTOR (PNP) SOT-363 FEATURES Power dissipation C1 B2E2 PCM : 300 mW(Tamb=25) Collector current E1 B1 ICM : -200 mA C2 Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ,Tstg: -55to +150 MARKING: 3C ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbo

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

BC857BVDUAL TRANSISTOR (PNP) FEATURES SOT-563 Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package Marking: K5V MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Cur

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM856,857,858( BC856,857,858)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol GM856A,B GM857A,B,C GM

BC856A,BBC857A,B,CBC858A,B,C SOT-23 Transistor(PNP)1. BASE 2. EMITTER 3. COLLECTOR SOT-23FeaturesIdeally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 Dimensions in inches and (millimeters

BC856/857/858 PNP general purpose TransistorA SOT-23 FEATURES Dim Min Max Low current.(max.100mA).A 2.70 3.10EB 1.10 1.50 Low voltage..K BC 1.0 TypicalAPPLICATIONS D 0.4 TypicalE 0.35 0.48 General purpose switching and amplification. G 1.80 2.00JDH 0.02 0.1G J 0.1 TypicalORDERING INFORMATION K 2.20 2.60H Type No. Marking Package Code C All Dim

BC857BV SOT-563 Dual Transistor (PNP)SOT-5631.600Features 1.200 1.600Epitaxial Die Construction 0.220 Complementary NPN Types Available (BC847BV) 0.500 Ultra-Small Surface Mount Package 0.565Marking: K5V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VC

BC856AW,BWBC857AW,BW,CWBC858AW,BW,CW STO-323 Transistor(PNP)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

BC856AW/BWBC857AW/BWBC858AW/BW/CWCOLLECTORGeneral Purpose Transistor 33PNP Silicon11P b Lead(Pb)-FreeBASE22EMITTERSOT-323(SC-70)MaximumRatings (TA=25Cunless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage BC856 -65VCEOBC857 -45 VBC858 -30Collector-Base Voltage BC856 -80VCBOBC857 -50 VBC858 -30Emitter-Base Voltage BC856 -5.0

BC856BDW SeriesPNP Dual General Purpose Transistors2 13P b Lead(Pb)-Free65412345 6PNP+PNPSOT-363(SC-88)Maximum RatingsRating Symbol BC856 BC857 BC858 Unit65 45 30Collector-Emitter Voltage VCEOV80 50 30Collector-Base Voltage VCBOV5.0 5.0 5.0Emitter-Base Voltage VEBOVCollector Current-Continuous IC 100 100100 mAThermal CharacteristicsChara

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CCOLLECTOR3General Purpose Transistor MARKING DIAGRAM33PNP Silicon 112BASEXX = DeviceSOT-23 Code (See1 2 Table Below)2EMITTER( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V -65BC856 CEOVBC857 -45BC858,BC859 -30Collector-Base VoltageBC856 -80VBC857

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Colle

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES Ideally suited for automatic insertion 1BASE For Switching and AF Amplifier Applications 2EMTTER 3COLLECTORMAXIMUM RATINGS (TA=25 unless

BC857Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage. / Applications General power amplifier application. / Equivalent Circuit / Pinning 3 1

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

BC856LT1BC858LT1 PNP Silicon General Purpose Transistors for switching and amplifier applications. As complementary types the NPN transistors BC846ALT1...BC850CLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol BC856 BC857 BC858 UnitCollector Base Voltage -VCBO 80 50 30 VCollector Emitter Voltage -VCEO 65 45 30 VEmitter Base Voltage -

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23 Device Marking:SOT-36

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

LESHAN RADIO COMPANY, LTD.LBC856AWT1G, BWT1GGeneral Purpose TransistorsLBC857AWT1G, BWT1GCWT1GPNP SiliconLBC858AWT1G, BWT1GThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/S-LBC856AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. S-LBC857AWT1G, BWT1GFeaturesCWT1GWe declare t

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconCWT1GThese transistors are designed for general purposeLBC858AWT1G, BWT1Gamplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount CWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesS-LBC857AWT1G, BWT1GWe declare that the

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC857CLT1G Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD.LBC856AWT1G,BWT1GGeneral Purpose TransistorsLBC857AWT1G,BWT1GPNP SiliconCWT1GLBC858AWT1G,BWT1GThese transistors are designed for general purposeamplifier applications. They are housed in the SOT323/CWT1GSC70 which is designed for low power surface mountS-LBC856AWT1G,BWT1Gapplications.S-LBC857AWT1G,BWT1GFeaturesWe declare that the mat

SMD Type TransistorsPNP TransistorsBC856W,BC857W,BC858W(KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC856W -80 Collector - Base Voltage BC857W VCBO -50BC858W -30BC856W -65 V Collector - Emitte

SMD Type TransistorsPNP TransistorsBC857S (KC857S) Features High current gain Low collector-emitter saturation voltage For AF input stages and driver applications Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50VCEO -45 Collector - Emitter Voltage VVCES -50 Emitter - Base Voltage VEBO -5 Collector Cur

SMD Type TransistorsPNP TransistorsBC856~BC858 (KC856~KC858)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC856 BC857 BC858 Unit C

BC856AW ~ BC859CWPNP GENERAL PURPOSE TRANSISTORS30/45/65 Volts POWER 250 mWattsVOLTAGEFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices : BC846AW/BC847AW/BC848AW/BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

BC857BSPNP GENERAL PURPOSE DUALTRANSISTORSVOLTAGE 45 Volt POWER 150 mWattFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0

BC856 SERIESPNP GENERAL PURPOSE TRANSISTORSPOWER 330 mWattVOLTAGE 30/45/65 VoltFEATURES0.120(3.04) General Purpose Amplifier Applications0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849Series Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40)0.047(1.20) Green molding compound as per IEC61

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

BC856W-BC858WPlastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage

BC856-BC858 TRANSISTOR PNP SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856 -80 VCBO V BC857 -50 BC858 -30 Collector-Emitter Voltage BC856 -65 VCEO V BC857 -45 B

BC856W-BC858WPlastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications1. BASE 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80VCBO V BC857W -50BC858W -30Collector-Emitter Voltage BC8

RUMW UMW BC857SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage BC856 -80 V B

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CGeneral Purpose TransistorPNP Silicon Package outlineFeatures Moisture sensitivity level: 1SOT-23 ESD rating human body model: >4000 V,machine model: >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

BC856-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J;BC858B=3K;BC858C=3L; CB EItem Symbol Unit Conditions ValueBC856Collector-Base Voltage -80 -50 BC857 V VC

www.msksemi.comBC856/57/58ABCSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARKBC856A 3A BC856B 3BBC857A 3E BC857B 3F BC857C 3GBC858A 3J BC858B 3K BC858C 3LMAXIMUM RATINGS (T

DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 ~ -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE: SOT-23 TERMINALS: SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT: 0.008

Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858SOT-23PNP TRANSISTOR3FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value Unit2 BC856 -801.BASECollectorBase VoltageV BC8

BC856/BC857/BC858 TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858Collector-Emitter Voltage -6

BC856/BC857/BC858 TRANSISTOR(PNP)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC856A=3A BC856B=3B Small Outline Plastic PackageBC857A=

BC856 THRU BC860BC856 THRU BC860BC856 THRU BC860BC8 56 THRU BC8 60 TRANSISTOR(PNP)FEATURESSwitching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits1BASE Low Noise: BC859, BC8602EMITTER 3COLLECTOR Complement to BC846 ... BC850MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

BC856-BC860BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-

RoHS RoHSCOMPLIANT COMPLIANTBC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case: SOT-323 Terminals: Tin plated

RoHS COMPLIANT BC857BSDual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 3F Equivalent circuit 1 / 5 S-S2532 Yangzhou

RoHS RoHSCOMPLIANT COMPLIANTBC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammability rating,RoHS-compliant, halogen-free Terminals: T

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated

BC856-BC858BC856A, B TRANSISTOR (PNP)BC857A, B,CSOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage BC856 -80V BC857 -50BC858 -30VCEO Collector-Emitter Voltage B

BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD

Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W -65

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) BC857DWSOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING: 3C MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC856/BC857/BC858FEATURES PNP General Purpose TransistorMAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter VoltageV -65 -45 -30 VdcCEOC

Plastic-Encapsulate Transistors(PNP)FEATURESBC856A/B (PNP)BC857A/B/CIdeally suited for automatic insertionBC858A/B/C (PNP)For Switching and AF Amplifier ApplicationsMarkingBC856A BC856B BC857A BC857B3A 3B 3E 3FBC857C BC858A BC858B BC858C1. BASE3G 3J 3K 3L2. EMITTER SOT-233. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitBC8

BC857BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BC847 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe