BC857T - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product specification 2000 Nov 15 Supersedes data of 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product data sheet 2000 Nov 15 Supersedes data of 1999 Apr 26 NXP Semiconductors Product data sheet BC856T; BC857T PNP general purpose transistors series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 c

BC856T SERIES BC857T SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE TABLE ON FOL

BC857AT/BT/CT SOT-523 Transistor(PNP) SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO

SMD Type Transistors PNP Transistors BC857T (KC857T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 3 0.3 0.05 0.5+0.1 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT 323/SC 70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices B

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Low current (max. 10

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D187 BC856W; BC857W PNP general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Apr 07 Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 80) 1 base S-mini package.

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Aug 10 NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BV FEATURES PINNING 300 mW total power dissipation PIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC857M series PNP general purpose transistors Product data sheet 2004 Mar 10 Supersedes data of 2003 Jul 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series FEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT (1 mm 0.6 mm 0.5 mm) VCEO col

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product data sheet 1999 Apr 26 Supersedes data of 1997 Jul 09 NXP Semiconductors Product data sheet PNP general purpose double transistor BC857BS FEATURES PINNING Low collector capacitance PIN DESCRIPTION Low collector-emitter saturation voltage 1, 4 emitter TR1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors 1999 Apr 12 Product specification Supersedes data of 1997 Apr 17 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jul 09 Philips Semiconductors Product specification PNP general purpose double transistor BC857BS FEATURES PINNING Low collector capacitance PIN DESCRIPTION Low collector-emitter saturation voltage 1, 4 emit

BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE IN

BC857BW SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BC857BW 3FW SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847BW APPLICATIONS SOT-323 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTA

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS 3 MINIATURE PLASTIC PACKAGE FOR 1 APPLICATION IN SURFACE MOUNTING CIRCUITS SOT-23 VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BC857 BC8

BC857S E2 B2 C1 C2 SC70-6 B1 Mark 3C pin #1 E1 NOTE The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Pr

August 2006 BC856- BC860 tm PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits 3 Low Noise BC859, BC860 Complement to BC846 ... BC850 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO

BC857XQA series 45 V, 100 mA PNP general-purpose transistors Rev. 1 26 August 2015 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package NPN complement Nexperia JEITA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC857xMB series 45 V, 100 mA PNP general-purpose transistors Rev. 1 21 February 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC BC857AMB SOT883B - - BC847AMB BC857BMB SOT883

BC857xMB series 45 V, 100 mA PNP general-purpose transistors Rev. 1 21 February 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEITA JEDEC BC857AMB SOT883B - - BC847AMB BC857BMB S

BC857xMB series 45 V, 100 mA PNP general-purpose transistors Rev. 1 21 February 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC BC857AMB SOT883B - - BC847AMB BC857BMB SOT883

BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 8 July 2015 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement BC847QAS. NPN/PNP complement BC847QAPN. 2. Features and benefits Reduces component count Reduces pick and place costs

BC857RA 45 V, 100 mA PNP/PNP general-purpose double transistors 14 September 2018 Product data sheet 1. General description PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement BC847RA NPN/PNP complement BC847RAPN 2. Features and benefits Reduces component count Reduces pick

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC856W; BC857W; BC858W PNP general purpose transistors Product data sheet 2002 Feb 04 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet BC856W; BC857W; PNP general purpose transistors BC858W FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC857M series PNP general purpose transistors Product data sheet 2004 Mar 10 Supersedes data of 2003 Jul 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series FEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT (1 mm 0.6 mm 0.5 mm) VCEO col

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC857M series PNP general purpose transistors Product data sheet 2004 Mar 10 Supersedes data of 2003 Jul 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC857M series FEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT (1 mm 0.6 mm 0.5 mm) VCEO col

BC856; BC857; BC858 65 V, 100 mA PNP general-purpose transistors Rev. 7 16 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN complement Nexperia JEDEC BC856 SOT23 TO-236AB BC846 BC856A BC846A BC856B BC84

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 PNP general purpose transistors Product data sheet 2004 Jan 16 Supersedes data of 2003 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistors BC856; BC857; BC858 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector G

PNP EPITAXIAL BC856/857/858/859/860 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC859, BC860 Complement to BC846 ... BC850 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO BC856 -80 V BC857/860 -50 V BC858/859 -30 V Collecto

PNP Silicon AF Transistors BC 856W ... BC 860W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 AW 3As Q62702-C2335 B E C SOT-323 BC 856

BC 857S PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration Package BC 857S 3Cs Q62702-2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collec

PNP Silicon AF Transistors BC 856 ... BC 860 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 846, BC 847, BC 849, BC 850 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 856 A 3As Q62702-C1773 B E C SOT-23 BC 856 B 3Bs Q6

PNP small signal transistor BC857B Features Dimensions (Unit mm) 1) Ideal for switching and AF amplifier applications. BC857B 2) High current gain. 2.9 0.95 0.4 0.45 (3) Packaging specifications Package Taping (2) (1) Type Code T116 0.95 0.95 0.15 1.9 Basic ordering unit (pieces) 3000 (1)Emitter BC857B (2)Base Each lead has same dimensions (3)Collector Ab

BC857B HZG Datasheet PNP General purpose transistor AEC-Q101 Qualified lOutline l SOT-23 Parameter Value VCEO -45V IC -100mA SST3 lFeatures lInner circuit l l 1)BVCEO>45V(IC=1mA) 2)Complements the BC847B HZG lApplication l AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER lPackaging specifications l Basic Package Taping Reel size Tape widt

Transistors BC857B (SPEC-A32) 607

BC856W SERIES BC857W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

BC856W SERIES BC857W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE

BC856AW - BC858CW PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automated Insertion SOT-323 Complementary NPN Types Available (BC846W-BC848W) C Dim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 BE D 0.65 Nominal

BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -45V Case X2-DFN0806-3 IC = -100mA high Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity Leve

BC857AT, BT, CT 45V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -45V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = -100mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Ter

BC857BFZ 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -45V Case X2-DFN0606-3 IC = -100mA High Collector Current Case Material Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity Level

BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) A SOT-23 For Switching and AF Amplifier Applications C Dim Min Max Qualified to AEC-Q101 Standards for High Reliability A 0.37 0.51 B C Lead

SOT23 PNP SILICON PLANAR BC856 BC857 BC858 BC859 GENERAL PURPOSE TRANSISTORS BC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-523 Complementary NPN Types Available (BC847AT,BT,CT) C Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 Qualified to AEC-Q101 Standards for High Reliability C 1.45 1.75

BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case SOT-563 Complementary PNP Type Available (BC847BV) Case Material Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

BC857BS 45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case SOT363 Ideally Suited for Automated Insertion Case Material Molded Plastic, Green Molding Compound. For switching and AF Amplifier Application UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Not

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary NPN Types BC846 BC848 Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case X2-DFN1006-3 BVCEO > -45V Case Material Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

BC857BLP 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case X1-DFN1006-3 BVCEO > -45V Case Material Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

BC857...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC857BL3 is not qualified according AEC Q101 Type Marking Pin

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

BC857...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC857BL3 is not qualified according AEC Q101 Type Marking Pin

BC856S/U_BC857S PNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according

BC856AW THRU BC858CW Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Tempera

M C C BC856A R Micro Commercial Components Micro Commercial Components THRU 130 W Cochran St, Unit B Simi Valley, CA 93065 BC858C Tel 818-701-4933 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1 Ideally Suited for Au

BC857S Features Muti-Chip Transistor Halogen Free. Green Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified SOT-363 Operating Junct

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth BC857BV Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors

BC857BS Features Muti-Chip Transistor Halogen Free. Green Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified SOT-363 Operating Junc

BC857A,BC857B,BC857C Features For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF" PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistor Compliant. See Ordering Information) Maximum Ratings SOT-23 Operati

BC856A MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 BC858C Fax (818) 701-4939 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1

BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http //onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25 C unless other

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR Pb-Free Package is Available* 3 1 BASE MAXIMUM RATINGS (TA = 25 C) Rating Symbol Max Unit

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) 2

BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

BC857BTT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifi

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http //onsemi.com PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Fr

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http //onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS

BC857 PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B High voltage VCEO=-45V E Complementary pair with BC847 SOT-23 Ordering Information Type NO. Marking Package Code UA BC857 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum ratin

BC857F PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=-45V Complementary pair with BC847F 2 SOT-23F Ordering Information Type NO. Marking Package Code UA BC857F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum

BC857UF Semiconductor Semiconductor PNP Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=-45V Complementary pair with BC847UF Ordering Information Type NO. Marking Package Code BC857UF BV SOT-323F hFE rank Outline Dimensions unit mm 1.95 2.25 1.20 1.40 1 3 2 PIN Connect

BC857U PNP Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=-45V 2 Complementary pair with BC847U SOT-323 Ordering Information Type NO. Marking Package Code BV BC857U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ra

BC856 BC857 BC858 PNP Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC856 BC857 BC858 UNITS DESCRIPTION VCBO Collector Base Voltage 80 50 30 V Collector Emmitter Voltage (+VBE = 1V) VCEX 80 50 30 V VCEO Collector Emitter Voltage 65 45 30

BC856A, B BC857A, B, C Elektronische Bauelemente BC858A, B, C A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n A General Purpose Transistor PNP Type Dim Min Max L n Collect current - 0.1A A 2.800 3.040 O O n Operating Temp. -55 C +150 C 3 B 1.200 1.400 S Top View B n RoHS compliant product C 0.890 1.110 1 2 D 0.370 0.500 V G G 1.780 2.040 COLLE

BC856AW, BW BC857AW, BW, CW Elektronische Bauelemente BC858AW, BW, CW RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 O O * Operating Temp. -55 C +150 C Dim Min Max A A 1.800 2.200 L B 1.150 1.350 C OLLE C TOR 3 C 0.800 1.000 S Top View 3 B 12 D 0.300 0.400 G 1.200 1.400 1 V G H 0.000 0.

BC857S PNP Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .096(2.45) .045(1.15) .085(2.15) Power dissipation O PCM 0.3 W (Tamp.= 25 C) .018(0.46) .010(0.26) Collector current .014(0.35) .006(0.15) .006(0.15) ICM -0.2 A .003(0.08) .0

BC857BV Dual PNP Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-563 FEATURES A Epitaxial Die Construction Complementary NPN Types Available (BC847BV) B Ultra-Small Surface Mount Package MARKING J D G H K5V F E C PACKAGE INFORMATION Millimeter Millimeter REF. REF.

BC856A SERIES Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICA

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G BC857W =3H BC858W =3M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking PACKAGE OUTLINE DETAILS BC856 = 3D ALL DIMENSIONS IN mm BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W TRANSISTOR (PNP) BC857W SOT-323 BC858W 1. BASE FEATURES 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) BC857S Isolated Transistor and Diode SOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING 3C MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC856 TRANSISTOR (PNP) BC857 SOT-23 BC858 FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors BC857BV DUAL TRANSISTOR (PNP+PNP) SOT-563 FEATURES Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package Marking K5V MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V

www.jscj-elec.com AD-BC856/57/58 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC856/57/58 Series Plastic-Encapsulated Transistor AD-BC856/57/58 series Transistor (PNP) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC856-A = 3A; AD-BC856-B = 3B AD-BC857-A = 3E; AD-BC8

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Colle

SEMICONDUCTOR BC856W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 For Complementary With NPN Type BC846W/847W/848W. _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 MAXIMUM RATING (Ta=25 ) K 0.00-0.

SEMICONDUCTOR BC856/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 For Complementary With NPN Type BC846/847/848. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 MAXIMUM RATING (Ta=25 ) L 0.55 P P

BC857S Multi-Chip TRANSISTOR (PNP) SOT-363 FEATURES Power dissipation C1 B2 E2 PCM 300 mW(Tamb=25 ) Collector current E1 B1 ICM -200 mA C2 Collector-base voltage V(BR)CBO -50 V Operating and storage junction temperature range TJ,Tstg -55 to +150 MARKING 3C ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbo

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

BC857BV DUAL TRANSISTOR (PNP) FEATURES SOT-563 Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package Marking K5V MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Cur

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM856,857,858( BC856,857,858) MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM

BC856A,B BC857A,B,C BC858A,B,C SOT-23 Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 Dimensions in inches and (millimeters

BC856/857/858 PNP general purpose Transistor A SOT-23 FEATURES Dim Min Max Low current.(max.100mA). A 2.70 3.10 E B 1.10 1.50 Low voltage.. K B C 1.0 Typical APPLICATIONS D 0.4 Typical E 0.35 0.48 General purpose switching and amplification. G 1.80 2.00 J D H 0.02 0.1 G J 0.1 Typical ORDERING INFORMATION K 2.20 2.60 H Type No. Marking Package Code C All Dim

BC857BV SOT-563 Dual Transistor (PNP) SOT-563 1.600 Features 1.200 1.600 Epitaxial Die Construction 0.220 Complementary NPN Types Available (BC847BV) 0.500 Ultra-Small Surface Mount Package 0.565 Marking K5V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VC

BC856AW,BW BC857AW,BW,CW BC858AW,BW,CW STO-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

BC856AW/BW BC857AW/BW BC858AW/BW/CW COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25 Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 -65 VCEO BC857 -45 V BC858 -30 Collector-Base Voltage BC856 -80 VCBO BC857 -50 V BC858 -30 Emitter-Base Voltage BC856 -5.0

BC856BDW Series PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 PNP+PNP SOT-363(SC-88) Maximum Ratings Rating Symbol BC856 BC857 BC858 Unit 65 45 30 Collector-Emitter Voltage VCEO V 80 50 30 Collector-Base Voltage VCBO V 5.0 5.0 5.0 Emitter-Base Voltage VEBO V Collector Current-Continuous IC 100 100 100 mA Thermal Characteristics Chara

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C COLLECTOR 3 General Purpose Transistor MARKING DIAGRAM 3 3 PNP Silicon 1 1 2 BASE XX = Device SOT-23 Code (See 1 2 Table Below) 2 EMITTER ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V -65 BC856 CEO V BC857 -45 BC858,BC859 -30 Collector-Base Voltage BC856 -80 V BC857

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Colle

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES Ideally suited for automatic insertion 1 BASE For Switching and AF Amplifier Applications 2 EMTTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless

BC857 Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage. / Applications General power amplifier application. / Equivalent Circuit / Pinning 3 1

BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

BC856LT1 BC858LT1 PNP Silicon General Purpose Transistors for switching and amplifier applications. As complementary types the NPN transistors BC846ALT1...BC850CLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol BC856 BC857 BC858 Unit Collector Base Voltage -VCBO 80 50 30 V Collector Emitter Voltage -VCEO 65 45 30 V Emitter Base Voltage -

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 Device Marking SOT-36

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G General Purpose Transistors LBC857AWT1G, BWT1G CWT1G PNP Silicon LBC858AWT1G, BWT1G These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ S-LBC856AWT1G, BWT1G SC 70 which is designed for low power surface mount applications. S-LBC857AWT1G, BWT1G Features CWT1G We declare t

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1 Unique Sit

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon CWT1G These transistors are designed for general purpose LBC858AWT1G, BWT1G amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features S-LBC857AWT1G, BWT1G We declare that the

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series Moisture Sensitivity Level 1 S-LBC857CLT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series Moisture Sensitivity Level 1 S-LBC857CLT1G ESD Rating Human Body Model >4000 V Series ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

LESHAN RADIO COMPANY, LTD. LBC856AWT1G,BWT1G General Purpose Transistors LBC857AWT1G,BWT1G PNP Silicon CWT1G LBC858AWT1G,BWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ CWT1G SC 70 which is designed for low power surface mount S-LBC856AWT1G,BWT1G applications. S-LBC857AWT1G,BWT1G Features We declare that the mat

SMD Type Transistors PNP Transistors BC856W,BC857W,BC858W (KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC856W -80 Collector - Base Voltage BC857W VCBO -50 BC858W -30 BC856W -65 V Collector - Emitte

SMD Type Transistors PNP Transistors BC857S (KC857S) Features High current gain Low collector-emitter saturation voltage For AF input stages and driver applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 VCEO -45 Collector - Emitter Voltage V VCES -50 Emitter - Base Voltage VEBO -5 Collector Cur

SMD Type Transistors PNP Transistors BC856 BC858 (KC856 KC858) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856 BC857 BC858 Unit C

BC856AW BC859CW PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volts POWER 250 mWatts VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices BC846AW/BC847AW/BC848AW/ BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS VOLTAGE 45 Volt POWER 150 mWatt FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-363, Plastic Terminals Solderable per MIL-STD-750, Method 2026 Approx. Weight 0

BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES 0.120(3.04) General Purpose Amplifier Applications 0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices BC846/BC847/BC848/BC849 Series Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) 0.047(1.20) Green molding compound as per IEC61

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage

BC856-BC858 TRANSISTOR PNP SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856 -80 VCBO V BC857 -50 BC858 -30 Collector-Emitter Voltage BC856 -65 VCEO V BC857 -45 B

BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC8

R UMW UMW BC857 SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V B

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon Package outline Features Moisture sensitivity level 1 SOT-23 ESD rating human body model >4000 V,machine model >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

BC856-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G; BC858A=3J;BC858B=3K;BC858C=3L; C B E Item Symbol Unit Conditions Value BC856 Collector-Base Voltage -80 -50 BC857 V VC

www.msksemi.com BC856/57/58ABC Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARK BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L MAXIMUM RATINGS (T

DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINALS SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT 0.008

Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858 SOT-23 PNP TRANSISTOR 3 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit 2 BC856 -80 1.BASE Collector Base Voltage V BC8

BC856/BC857/BC858 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858 Collector-Emitter Voltage -6

BC856/BC857/BC858 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC856A=3A BC856B=3B Small Outline Plastic Package BC857A=

BC856 THRU BC860 BC856 THRU BC860 BC856 THRU BC860 BC8 56 THRU BC8 60 TRANSISTOR(PNP) FEATURES Switching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits 1 BASE Low Noise BC859, BC860 2 EMITTER 3 COLLECTOR Complement to BC846 ... BC850 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

BC856-BC860 BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-

RoHS RoHS COMPLIANT COMPLIANT BC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case SOT-323 Terminals Tin plated

RoHS COMPLIANT BC857BS Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 3F Equivalent circuit 1 / 5 S-S2532 Yangzhou

RoHS RoHS COMPLIANT COMPLIANT BC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Terminals T

RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated

BC856-BC858 BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W -65

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) BC857DW SOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING 3C MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage

BC856 BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC856/BC857/BC858 FEATURES PNP General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter Voltage V -65 -45 -30 Vdc CEO C

Plastic-Encapsulate Transistors (PNP) FEATURES BC856A/B (PNP) BC857A/B/C Ideally suited for automatic insertion BC858A/B/C (PNP) For Switching and AF Amplifier Applications Marking BC856A BC856B BC857A BC857B 3A 3B 3E 3F BC857C BC858A BC858B BC858C 1. BASE 3G 3J 3K 3L 2. EMITTER SOT-23 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit BC8

BC857 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to BC847 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe