KST8050S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KST8050S
Código: J3Y
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar KST8050S
KST8050S Datasheet (PDF)
kst8050s.pdf
SMD Type TransistorsSMD TypeNPN TransistorsKST8050SSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13FeaturesCollector Current: IC=0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5
kst8050d-50.pdf
SMD Type TransistorsSMD TypeNPN TransistorsKST8050D-50SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollec
kst8050.pdf
SMD Type TransistorsSMD TypeNPN TransistorsKST8050SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesCollector Current: IC=1.5A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 V
kst8050m.pdf
SMD TypeSMD Type TransistorsNPN TransistorsKST8050MSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current: IC=0.8A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Bas
kst8050x.pdf
SMD Type TransistorsNPN TransistorsKST8050XSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Power Dissipation: PC=0.3W Collector Current: IC=1.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitte
kst8050d.pdf
SMD Type TransistorsSMD TypeNPN Transistors KST8050DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCollector Current: IC=1.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEB
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050