MMBT3906-D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT3906-D
Código: 2A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT3906-D
MMBT3906-D Datasheet (PDF)
mmbt3906-d.pdf
SMD Type TransistorsPNP Transistors(KMBT3906-D)MMBT3906-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2 Complementary to MMBT3904-D +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Marking: 2A1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage
mmbt3906-g.pdf
General Purpose TransistorMMBT3906-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -As complementary type, the NPN30.056 (1.40)transistor MMBT3904-G is recommended0.047 (1.20)1 2Collector0.079 (2.00)0.006 (0.15)30.003 (0.08)0.071 (1.80)0.041 (1.05) 0.100 (2.55)0.035 (0.90) 0.089 (2.25)1Base0.004 (0.10) m
mmbt3906-hf.pdf
General Purpose TransistorMMBT3906-HF (PNP)RoHS DeviceHalogen FreeFeaturesSOT-23 -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -As complementary type, the NPN3transistor MMBT3906-HF is recommended0.056 (1.40)0.047 (1.20)1 20.079 (2.00)0.006 (0.15)Collector0.003 (0.08)0.071 (1.80)30.041 (1.05) 0.100 (2.55)0.035 (0.90) 0.089 (2.25)1Base
mmbt3906-ms.pdf
www.msksemi.comMMBT3906-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES As complementary type, the NPN transistor MMBT3904-MS is Recommended Epitaxial planar die construction 1. BASE2. EMITTERMARKING: 2ASOT23 3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V
mmbt3906-l mmbt3906-h.pdf
Jingdao Microelectronics co.LTD MMBT3906MMBT3906SOT-23PNP TRANSISTOR3FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -40 V2.EMIT
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1418R
History: 2SA1418R
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