MMBT5087 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBT5087
   Código: 1Q_2Q
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar MMBT5087

MMBT5087 Datasheet (PDF)

..1. Size:406K motorola
mmbt5087.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5087LT1/DLow Noise Transistor COLLECTOR MMBT5087LT13PNP SiliconMotorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGSRating Symbol Value Unit1CollectorEmitter Voltage VCEO 50 Vdc 2CollectorBase Voltage VCBO 50 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 3.0 VdcSOT23 (

..2. Size:100K fairchild semi
2n5086 2n5087 mmbt5087.pdf

2N5086/2N5087/MMBT5087PNP General Purpose Amplifier3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.2SOT-23TO-92 1Mark: 2Q11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collect

..3. Size:1787K kexin
mmbt5087.pdf

SMD Type TransistorsPNP TransistorsMMBT5087 (KMBT5087)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage

..4. Size:303K cn shikues
mmbt5087.pdf

MMBT5087PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications Marking: 2Q SOT-23 Absolute Maximum Ratings (Ta = 25 OC) Characteristics at Ta = 25 OC REV.08 1 of 2MMBT5087REV.08 2 of 2

0.1. Size:229K onsemi
mmbt5087l.pdf

MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Volt

0.2. Size:227K onsemi
mmbt5087lt3g.pdf

MMBT5087LT1GLow Noise TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -50 Vdc2EMITTEREmitter-Base Voltage VEBO -3.0 VdcCollector Current - Continuous IC -50 mAdcTHERMA

0.3. Size:99K onsemi
nsvmmbt5087lt1g.pdf

MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter V

0.4. Size:227K onsemi
mmbt5087lt1g.pdf