MMBT5087 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT5087
SMD Transistor Code: 1Q_2Q
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT23
MMBT5087 Transistor Equivalent Substitute - Cross-Reference Search
MMBT5087 Datasheet (PDF)
mmbt5087.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5087LT1/DLow Noise Transistor COLLECTOR MMBT5087LT13PNP SiliconMotorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGSRating Symbol Value Unit1CollectorEmitter Voltage VCEO 50 Vdc 2CollectorBase Voltage VCBO 50 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 3.0 VdcSOT23 (
2n5086 2n5087 mmbt5087.pdf
2N5086/2N5087/MMBT5087PNP General Purpose Amplifier3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.2SOT-23TO-92 1Mark: 2Q11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collect
mmbt5087.pdf
SMD Type TransistorsPNP TransistorsMMBT5087 (KMBT5087)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage
mmbt5087.pdf
MMBT5087PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications Marking: 2Q SOT-23 Absolute Maximum Ratings (Ta = 25 OC) Characteristics at Ta = 25 OC REV.08 1 of 2MMBT5087REV.08 2 of 2
mmbt5087l.pdf
MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Volt
mmbt5087lt3g.pdf
MMBT5087LT1GLow Noise TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -50 Vdc2EMITTEREmitter-Base Voltage VEBO -3.0 VdcCollector Current - Continuous IC -50 mAdcTHERMA
nsvmmbt5087lt1g.pdf
MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter V
mmbt5087lt1g.pdf
MMBT5087LT1GLow Noise TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -50 Vdc2EMITTEREmitter-Base Voltage VEBO -3.0 VdcCollector Current - Continuous IC -50 mAdcTHERMA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
