NSS1C200LT1G. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

NSS1C200LT1G datasheet

..1. Size:896K kexin
nss1c200lt1g.pdf pdf_icon

SMD Type Transistors PNP Transistors NSS1C200LT1G (KSS1C200LT1G) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 COLLECTOR 1.9+0.1 -0.1 1.Base BASE 2.Emitter 3.collector EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating U

3.1. Size:124K onsemi
nss1c200lt1.pdf pdf_icon

NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is import

5.1. Size:129K onsemi
nss1c200l nsv1c200l.pdf pdf_icon

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

6.1. Size:198K onsemi
nss1c200mz4 nsv1c200mz4.pdf pdf_icon

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef