NSS1C200LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS1C200LT1G
Código: VL*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.49 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
NSS1C200LT1G Datasheet (PDF)
nss1c200lt1g.pdf

SMD Type TransistorsPNP TransistorsNSS1C200LT1G (KSS1C200LT1G)SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V1 2+0.1+0.050.95 -0.1 0.1 -0.01COLLECTOR1.9+0.1-0.11.BaseBASE2.Emitter3.collectorEMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U
nss1c200lt1.pdf

NSS1C200LT1G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is import
nss1c200l nsv1c200l.pdf

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i
nss1c200mz4 nsv1c200mz4.pdf

PNP Transistor, Low VCE(sat)100 V, 2.0 ANSS1C200MZ4,NSV1C200MZ4ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowwww.onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications-100 VOLTS, 2.0 AMPSwhere affordable ef
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