ZXTP2013
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXTP2013
Código: ZXTP2013
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3
W
Tensión colector-base (Vcb): 140
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 125
MHz
Capacitancia de salida (Cc): 42
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT223
Búsqueda de reemplazo de transistor bipolar ZXTP2013
ZXTP2013
Datasheet (PDF)
..1. Size:1115K kexin
zxtp2013.pdf
SMD Type TransistorsPNP TransistorsZXTP2013 (KXTP2013)Unit:mmSOT-2236.500.23.000.1 Features4 5 A continuous current Up to 10 A peak current Very low saturation voltages1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle
0.1. Size:413K diodes
zxtp2013g.pdf
A Product Line of Diodes Incorporated GreenZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(S
0.2. Size:95K diodes
zxtp2013z.pdf
ZXTP2013Z100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = -100V : RSAT = 57m ; IC = -3.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 100V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURES 3.5 amps continuous currentSOT89
7.1. Size:427K diodes
zxtp2012z.pdf
ZXTP2012Z Green60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -60V Case: SOT89 IC = -4.3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL RSAT = 32m for a Low Equivalent On-Resistance Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
7.2. Size:445K diodes
zxtp2012g.pdf
ZXTP2012G Green60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
7.3. Size:116K diodes
zxtp2012a.pdf
ZXTP2012A60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINESUMMARYBVCEO = -60V : RSAT = 38m ; IC = -3.5ADESCRIPTIONPackaged in the E-line outline this new low saturation 60V PNP transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESE-line 3.5 amps continuous current Up
7.4. Size:964K diodes
zxtp2014z.pdf
ZXTP2014Z 140V PNP LOW SATURATION MEDIUM VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -140V Case: SOT89 IC = -3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)
7.5. Size:423K diodes
zxtp2014g.pdf
A Product Line of Diodes Incorporated Green ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case: SOT223 IC = -4A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(
7.6. Size:962K kexin
zxtp2014z.pdf
SMD Type TransistorsPNP TransistorsZXTP2014Z (KXTP2014Z) Features1.70 0.1 3 amps continuous current Up to 10 amps peak current Very low saturation voltages Marking: 9550.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCE
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