Биполярный транзистор ZXTP2013
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: ZXTP2013
Маркировка: ZXTP2013
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 140
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 125
MHz
Ёмкость коллекторного перехода (Cc): 42
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SOT223
Аналоги (замена) для ZXTP2013
ZXTP2013
Datasheet (PDF)
..1. Size:1115K kexin
zxtp2013.pdf SMD Type TransistorsPNP TransistorsZXTP2013 (KXTP2013)Unit:mmSOT-2236.500.23.000.1 Features4 5 A continuous current Up to 10 A peak current Very low saturation voltages1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle
0.1. Size:413K diodes
zxtp2013g.pdf A Product Line of Diodes Incorporated GreenZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(S
0.2. Size:95K diodes
zxtp2013z.pdf ZXTP2013Z100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = -100V : RSAT = 57m ; IC = -3.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 100V PNP transistoroffers low on state losses making it ideal for use in DC-DC circuits, lineswitching and various driving and power management functions.FEATURES 3.5 amps continuous currentSOT89
7.1. Size:427K diodes
zxtp2012z.pdf ZXTP2012Z Green60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -60V Case: SOT89 IC = -4.3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL RSAT = 32m for a Low Equivalent On-Resistance Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
7.2. Size:445K diodes
zxtp2012g.pdf ZXTP2012G Green60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case: SOT223 IC = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
7.3. Size:116K diodes
zxtp2012a.pdf ZXTP2012A60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINESUMMARYBVCEO = -60V : RSAT = 38m ; IC = -3.5ADESCRIPTIONPackaged in the E-line outline this new low saturation 60V PNP transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESE-line 3.5 amps continuous current Up
7.4. Size:964K diodes
zxtp2014z.pdf ZXTP2014Z 140V PNP LOW SATURATION MEDIUM VOLTAGE TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -140V Case: SOT89 IC = -3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)
7.5. Size:423K diodes
zxtp2014g.pdf A Product Line of Diodes Incorporated Green ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case: SOT223 IC = -4A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(
7.6. Size:962K kexin
zxtp2014z.pdf SMD Type TransistorsPNP TransistorsZXTP2014Z (KXTP2014Z) Features1.70 0.1 3 amps continuous current Up to 10 amps peak current Very low saturation voltages Marking: 9550.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCE
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