SD1441 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1441
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 350 W
Tensión colector-base (Vcb): 36 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 22 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 175 MHz
Capacitancia de salida (Cc): 430 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: 500-6L-FLG
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SD1441 datasheet
sd1441.pdf
SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG C A 1 3 FEATURES 2x N FULL R 175 MHz 12.5 V D PG = 5.0 dB at 150 W/175 MHz 4 2 Omnigold Metalization System B E .725/18,42 Common
2sd1441.pdf
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2sd1441.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1
2sd1441.pdf
isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
Otros transistores... MMBT3906DW, MMBT5087, NSS1C200LT1G, SBT5853PT1G, SBT5853PT2G, ZX5T150, ZX5T250, ZXTP2013, S9018, SD1477, SD1538-8, TP9380, TPV375, 2N2221AUA, 2N2221AUB, 2N22221AL, 2N2222AL
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