SD1477 Todos los transistores

 ..1. Size:242K  st
 sd1477.pdf

SD1477 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 175 MHz 12.5 VOLTS COMMON EMITTER POUT = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF FM communications. This device utilizes diffused .500 6L FL (M111) emitter resistors to wit

 ..2. Size:14K  advanced-semi
 sd1477.pdf

SD1477 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI SD1477 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES C A Internal Input Matching Network 2x N FULL R PG = 6.0 dB at 100 W/175 MHz D Omnigold Metalization System B E .725/18,42 F G MAXIMUM RATINGS M K H I L IC 20 A J MIN

 9.1. Size:90K  st
 sd1476.pdf

SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .55 - 88 MHz .32 VOLTS .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .CLASS AB PUSH PULL .HIGH SATURATED POWER CAPABILITY 2 x .437 x .450 2LFL (M165) .DIFFUSED EMITTER BALLAST epoxy sealed RESISTORS ORDER CODE BRANDING .DESIGNED FOR HIGH POWER LINEAR SD1476 SD1476 OPERATION .P 240 WMIN. WITH 12.0 dB GAIN

 9.2. Size:57K  panasonic
 2sd1478 e.pdf

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit mm +0.2 For low-frequency amplification 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver

 9.3. Size:54K  panasonic
 2sd1474.pdf

Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory 3.1 0.1 linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw 1.3

 9.4. Size:53K  panasonic
 2sd1478.pdf

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit mm +0.2 For low-frequency amplification 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver

 9.5. Size:33K  hitachi
 2sd1472.pdf

2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2 1 2 3 1 ID 4 1. Base 2. Collector 2 k 0.5 k 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD1472 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEB

 9.6. Size:32K  hitachi
 2sd1471.pdf

2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 2 2 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector pea

 9.7. Size:32K  hitachi
 2sd1470.pdf

2SD1470 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 2 2 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 1A Colle

 9.8. Size:891K  kexin
 2sd1472.pdf

SMD Type Transistors NPN Transistors 2SD1472 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 k 2.Collector (Typ) (Typ) 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter

 9.9. Size:938K  kexin
 2sd1471.pdf

SMD Type Transistors NPN Transistors 2SD1471 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A C Collector Emitter Voltage VCEO=30V B 0.42 0.1 0.46 0.1 1.Base E 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base V

 9.10. Size:873K  kexin
 2sd1478a.pdf

SMD Type Transistors NPN Transistors 2SD1478A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 C 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

 9.11. Size:572K  kexin
 2sd1478.pdf

SMD Type Transistors NPN Transistors 2SD1478 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 C 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

 9.12. Size:829K  kexin
 2sd1470.pdf

SMD Type Transistors NPN Transistors 2SD1470 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=60V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

 9.13. Size:212K  inchange semiconductor
 2sd1479.pdf

isc Silicon NPN Power Transistor 2SD1479 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V

 9.14. Size:211K  inchange semiconductor
 2sd1475.pdf

isc Silicon NPN Power Transistor 2SD1475 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25

 9.15. Size:209K  inchange semiconductor
 2sd1476.pdf

isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25