SD1477RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 175 MHz 12.5 VOLTS COMMON EMITTER POUT = 100 W MIN. WITH 6.0 dB GAIN DESCRIPTIONThe SD1477 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFFM communications. This device utilizes diffused.500 6L FL (M111)emitter resistors to wit

SD1477 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1477 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES:C A Internal Input Matching Network 2x NFULL R PG = 6.0 dB at 100 W/175 MHz D Omnigold Metalization System B E .725/18,42 F GMAXIMUM RATINGS MKH I LIC 20 A J MIN

SD1476RF & MICROWAVE TRANSISTORSTV/LINEAR APPLICATIONS.55 - 88 MHz.32 VOLTS.COMMON EMITTER.GOLD METALLIZATION.INTERNAL INPUT MATCHING.CLASS AB PUSH PULL.HIGH SATURATED POWER CAPABILITY2 x .437 x .450 2LFL (M165).DIFFUSED EMITTER BALLASTepoxy sealedRESISTORSORDER CODE BRANDING.DESIGNED FOR HIGH POWER LINEARSD1476 SD1476OPERATION.P 240 WMIN. WITH 12.0 dB GAIN

Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver

Power Transistors2SD1474Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh forward current transfer ratio hFE which has satisfactory 3.1 0.1linearityHigh emitter to base voltage VEBOFull-pack package which can be installed to the heat sink withone screw1.3

Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver

2SD1472Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineUPAK21231ID41. Base2. Collector2 k 0.5 k3. Emitter(Typ) (Typ)4. Collector (Flange)32SD1472Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEB

2SD1471Silicon NPN Planar, DarlingtonApplicationHigh gain amplifierOutlineUPAK12 23141. Base2. Collector3. Emitter4. Collector (Flange)32SD1471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector pea

2SD1470Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineUPAK12 23141. Base2. Collector3. Emitter4. Collector (Flange)32SD1470Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current IC 1AColle

SMD Type TransistorsNPN Transistors2SD1472SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.1BID1.Base2 k 0.5 k2.Collector(Typ) (Typ)3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter

SMD Type TransistorsNPN Transistors2SD1471SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3AC Collector Emitter Voltage VCEO=30VB0.42 0.10.46 0.11.BaseE2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base V

SMD Type TransistorsNPN Transistors2SD1478ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SD1478SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

SMD Type TransistorsNPN Transistors2SD1470SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=60VC0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol

isc Silicon NPN Power Transistor 2SD1479DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV

isc Silicon NPN Power Transistor 2SD1475DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1476DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25