2N5154L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5154L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5.5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70 MHz
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N5154L
2N5154L Datasheet (PDF)
2n5152 2n5152l 2n5154 2n5154l.pdf
NPN Power Silicon Transistor2N5152, 2N5152L & 2N5154, 2N5154LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package: 2N5152L, 2N5154LTO-39 (TO-205AD) Package: 2N5152, 2N5154Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V
2n5154hr.pdf
2N5154HRHi-Rel NPN bipolar transistor 80 V - 5 ADatasheet - production dataFeaturesBVCEO 80 V13 IC (max) 5 A2HFE at 10 V - 150 mA > 70TO-39TO-257Operating temperature range - 65 C to + 200 C213 Hi-Rel NPN bipolar transistor Linear gain characteristicsSMD.5 ESCC qualified European preferred part list - EPPLFigure 1. Internal schematic diagr
2n5151 2n5152 2n5153 2n5154.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5154n2a.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A Hermetic Ceramic Surface Mount SMD1 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curren
2n5154smd05.pdf
2N5152SMD052N5154SMD05MECHANICAL DATANPN BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5152SMD05 and the 2N5154SMD05 aresilicon expitaxial planar NPN transistors in aCeramic S
2n5154x-220m.pdf
SILICON NPN POWER TRANSISTOR 2N5154X-220M Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base
2n5154t2a.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A Hermetic Metal TO39 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea
2n5154xx.pdf
2N5154XXMECHANICAL DATADimensions in mm (inches)8.51 (0.34)9.40 (0.37)7.75 (0.305)8.51 (0.335)HIGH SPEED 6.10 (0.240)6.60 (0.260)MEDIUM VOLTAGESWITCH0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.5.08 (0.200)typ.2.542(0.100)1 3DESCRIPTION0.74 (0.029)1.14 (0.045)0.71 (0.028)0.86 (0.034) The 2N5154XX is a silicon expitaxial
2n5154x.pdf
2N5154XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5152 2n5154.pdf
2N51522N5154MECHANICAL DATADimensions in mm (inches)HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec
2n5154xsmd05.pdf
2N5154XSMD05MECHANICAL DATADimensions in mm (inches)HIGH SPEED 7.54 (0.296)0.76 (0.030)MEDIUM VOLTAGEmin.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.SWITCH 0.127 (0.005)1 32DESCRIPTION 0.127 (0.005)The 2N5154XSMD05 is a silicon expitaxial16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)planar NPN transistors in a Ceramic Surfacemax.7.26 (0.286) Mount
2n5154xsmd.pdf
2N5154XSMDMECHANICAL DATADimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTIONThe 2N5154XSMD is a silicon expitaxialplanar NPN transistors in a Ceramic SurfaceMount Package for use in Switching and Linear applications.
2n5154n1b.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curr
2n5154u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154JANTX 2N5152L 2N5154LJANTXV 2N5152U3 2N5154U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: T1327 | 2SC1131 | 12A02MH-TL-E | 2SA1263NR | T2471 | 2SC1166 | 8550M
History: T1327 | 2SC1131 | 12A02MH-TL-E | 2SA1263NR | T2471 | 2SC1166 | 8550M
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050