13003C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PHE13003CNPN power transistorRev. 1 29 July 2010 Preliminary data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain1.3 Applications Compact fluorescent l

PHD13003CNPN power transistor with integrated diodeRev. 01 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package1.2 Features and benefits Fast switching High voltage capability High typical DC current

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

KSB13003C SEMIHOW REV.A0, January 2012 KSB13003CKSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E

KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CRKSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector

MOTMOT13003C/MOT13003DNPN SILICON TRANSISTORSymbol PRODUCT CHARACTERISTICSBVCBO700VBVCEO400V10-40HFE@5V1AIC 1.5A FEATURES* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100C Typical tc = 290ns @ 1A, 100C. * 700V blocking capability APPLICATIONS* Switching regulators, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuit

PHE13003CNPN power transistor13 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses3. Applications Compac

IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where