STU13005N Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU13005N

Código: 13005N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO251

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STU13005N datasheet

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stu13005n.pdf pdf_icon

STU13005N

STU13005N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed 3 Application 2 1 Switch mode power supplies (AC-DC converters) IPAK Description This device is manufactured using high voltage Figure 1. Internal schematic diagram multi epitaxial planar technology for high swit

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stu13nm60n.pdf pdf_icon

STU13005N

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, I PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features TAB VDSS RDS(on) Order codes ID (@Tjmax) max 3 3 2 2 1 STF13NM60N 1 I PAK TO-220FP STI13NM60N STP13NM60N 650 V

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stu13nb60.pdf pdf_icon

STU13005N

STU13NB60 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STU13NB60 600 V

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stp13n60m2 stu13n60m2 stw13n60m2.pdf pdf_icon

STU13005N

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 3 2 1 STP13N60M2 3 2 1 IPAK STU13N60M2 650 V 0.38 11 A TO-220 STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g

Otros transistores... STN0214, STN2580, STN826, STN9360, STP5508, STR1550, STR2550, STT13005D, TIP3055, STW2040, STX117, STX13004, LB120A, ST13003DN, ST13003N, ST13009, ST26025A