ST13003N Datasheet. Equivalente

 ..1. Size:203K  st
 st13003n.pdf

ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a

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 st13003d-k.pdf

ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schemati

 7.2. Size:80K  st
 st13003.pdf

ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 SWITCH MODE POWER SUPPLIES 3 DESCRIPTION SOT-32 The device is manufactured using high voltage Multi Epitaxial Planar te

 7.3. Size:218K  st
 st13003-k.pdf

ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting (CFL) 3 SMPS for battery charger SOT-32 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram multi-epitaxi

 7.4. Size:163K  st
 st13003dn.pdf

ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi

 7.5. Size:241K  st
 st13003 st13003-k.pdf

ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufact

 7.6. Size:160K  semtech
 st13003.pdf

ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Co

 7.7. Size:615K  semtech
 st13003h.pdf

ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCES 900 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 9 V Collector Current (f 100 Hz, Duty cycle 50 %)

 7.8. Size:644K  semtech
 st13002t st13003t.pdf

ST 13002T / 13003T NPN Silicon Power Transistors E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400 Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Peak Collector Current at t = 5 ms ICM 3 A Base C