2N6579 Datasheet. Equivalente

 ..1. Size:191K  inchange semiconductor
 2n6579.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6579 DESCRIPTION Excellent Safe Operating Area High Voltage,High Speed Low Saturation Voltage Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Off-line power supplies Switching amplifiers Inverters/C

 9.1. Size:148K  motorola
 2n6576 2n6577 2n6578.pdf

Order this document MOTOROLA by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 NPN Silicon Power Darlington 2N6578 Transistors General purpose EpiBase power Darlington transistors, suitable for linear and switching applications. 15 AMPERE POWER TRANSISTORS Replacement for 2N3055 and Driver NPN SILICON High Gain Darlington Performance DARLINGTON Built in Dio

 9.2. Size:92K  central
 2n6576 2n6577 2n6578.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:11K  semelab
 2n6575.pdf

2N6575 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.4. Size:198K  cdil
 2n657.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 100 V VCBO Collector Base Voltage 100 V VEBO Emitter Base Voltage 8.0 V IC Col

 9.5. Size:153K  jmnic
 2n6576 2n7577 2n7578.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(T

 9.6. Size:118K  inchange semiconductor
 2n6576 2n6577 2n6578.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

 9.7. Size:181K  inchange semiconductor
 2n6575.pdf

isc Silicon NPN Power Transistor 2N6575 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min.) CEO Fast Switching Speed High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switch

 9.8. Size:181K  inchange semiconductor
 2n6574.pdf

isc Silicon NPN Power Transistor 2N6574 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 275V(Min.) CEO Fast Switching Speed High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switch

 9.9. Size:181K  inchange semiconductor
 2n6573.pdf

isc Silicon NPN Power Transistor 2N6573 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min.) CEO Fast Switching Speed High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switch