INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6579DESCRIPTIONExcellent Safe Operating AreaHigh Voltage,High SpeedLow Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSOff-line power suppliesSwitching amplifiersInverters/C

Order this documentMOTOROLAby 2N6576/DSEMICONDUCTOR TECHNICAL DATA2N65762N6577NPN Silicon Power Darlington2N6578TransistorsGeneralpurpose EpiBase power Darlington transistors, suitable for linear andswitching applications.15 AMPEREPOWER TRANSISTORS Replacement for 2N3055 and DriverNPN SILICON High Gain Darlington PerformanceDARLINGTON Builtin Dio

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2N6575Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N657TO-39Metal Can PackageGeneral Purpose Transistor.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 100 VVCBOCollector Base Voltage 100 VVEBOEmitter Base Voltage 8.0 VICCol

JMnic Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6576 2N6577 2N6578 DESCRIPTION With TO-3 package DARLINGTON High DC current gain APPLICATIONS Power switching Audio amplifiers Hammer drivers Series and shunt regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute

isc Silicon NPN Power Transistor 2N6575DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

isc Silicon NPN Power Transistor 2N6574DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 275V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch

isc Silicon NPN Power Transistor 2N6573DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min.)CEOFast Switching SpeedHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters, inverters, pulse-width- modulatedregulators and a variety of power switch