3DA1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DA1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7.5
W
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.75
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de 3DA1
-
Selección ⓘ de transistores por parámetros
3DA1 datasheet
..1. Size:32K shaanxi
3da1 3da2 3da4.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1.
0.1. Size:611K blue-rocket-elect
br3da122dk.pdf 

BLD122D(BR3DA122DK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency elec
0.2. Size:134K china
3da100.pdf 

3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V
0.3. Size:853K foshan
2sc1846 3da1846.pdf 

2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier. V , 2SA885(3CA885) 3W CE(sat) Features Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 45 V
0.4. Size:198K lzg
2sc1573-a 3da1573-a.pdf 

2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier and video frequency output in small screen TV. ,f , 2SA879(3CA879) T Features High V , high f ; Complementary pair with 2SA879(3CA879). CEO T /Absolute maximum rati
0.5. Size:518K lzg
tip142t 3da142t.pdf 

TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR Purpose Linear and switching industrial equipment. - TIP147T(3CA147T) Features Monolithic construction with built in base-emitter shunt resistors High DC current gain complement to TIP147T(
0.6. Size:567K lzg
tip122 3da122.pdf 

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP127(3CA127) Features Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I
0.7. Size:198K lzg
2sc1360-a 3da1360-a.pdf 

2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR Purpose Picture IF amplifier . , Features High f , large P . T C /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360
0.8. Size:227K lzg
2sc1383 3da1383.pdf 

2SC1383(3DA1383) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency power amplifier and driver. , 2SA683(3CA683) /Features Low V ,complementary pair CE(sat) with 2SA683(3CA683). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30
0.10. Size:29K shaanxi
3da101 3da102.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog
0.11. Size:31K shaanxi
3da76 3da10a 3da96.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9
0.12. Size:25K shaanxi
3da10.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
0.13. Size:23K shaanxi
3da10a.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10A NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611 4. Use for analog computer power output, amplifica
0.14. Size:32K shaanxi
3da14 3da27 3da28.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a
0.15. Size:24K shaanxi
3da150.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA150 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
Otros transistores... 3DA2275A
, 3DA2344
, 3DA340
, 3DA3417
, 3DA3420
, 3DA3421
, 3DA3422
, 3DA3502
, 2SC1815
, 3DA2
, 3DA4
, 3DA10A
, 3DA10B
, 3DA10C
, 3DA10D
, 3DA10E
, 3DA10F
.