Биполярный транзистор 3DA1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DA1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 7.5 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.75 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
3DA1 Datasheet (PDF)
3da1 3da2 3da4.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1.
br3da122dk.pdf
BLD122D(BR3DA122DK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency elec
3da100.pdf
3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V
2sc1846 3da1846.pdf
2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power amplifier. :V , 2SA885(3CA885) 3W CE(sat)Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 45 V
2sc1573-a 3da1573-a.pdf
2SC1573(3DA1573) 2SC1573A(3DA1573A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier and video frequency output in small screen TV. :,f , 2SA879(3CA879) TFeatures: High V , high f ; Complementary pair with 2SA879(3CA879). CEO T/Absolute maximum rati
tip142t 3da142t.pdf
TIP142T(3DA142T) NPN /SILICON NPN TRANSISTOR : Purpose: Linear and switching industrial equipment. : - TIP147T(3CA147T) Features: Monolithic construction with built in base-emitter shunt resistorsHigh DC current gain complement to TIP147T(
tip122 3da122.pdf
TIP122(3DA122) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP127(3CA127) Features: Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I
2sc1360-a 3da1360-a.pdf
2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR : Purpose: Picture IF amplifier . :, Features: High f , large P . T C/Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1360 50 VCBO V 2SC1360A 60 2SC1360
2sc1383 3da1383.pdf
2SC1383(3DA1383) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier and driver. :, 2SA683(3CA683)/Features: Low V ,complementary pair CE(sat)with 2SA683(3CA683). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30
2sc1384 3da1384.pdf
2SC1384(3DA1384) NPN /SILICON NPN TRANSISTOR : Purpose: AF power amplifier and driver applications. :, 2SA684(3CA684) 23 Features: Low V ,23W output in complementary pair with 2SA684(3CA684). CE(sat)/Absolute maximum ratings(Ta=25)
3da101 3da102.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog
3da76 3da10a 3da96.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9
3da10.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
3da10a.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10ANPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: QZJ840611 4. Use for analog computer power output, amplifica
3da14 3da27 3da28.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a
3da150.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA150NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050