3DA2 Todos los transistores

 ..1. Size:32K  shaanxi
 3da1 3da2 3da4.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1.

 0.1. Size:108K  no
 3da2983.pdf

LJ2015-44 3DA2983 NPN T =25 1.0 A P W C T =25 15 c I 1.5 A C T 150 jm T -55 150 stg V I =1mA 160 V (BR)CBO CE 50 V I =10mA 160 V (BR)CEO CE 50 V I =1mA 5.0 V (BR)EBO EB I V =160V 1.0 A CBO CB I V =5V 1.0 A

 0.2. Size:109K  no
 3da2522.pdf

3DA2522 NPN PCM Ta=25 120 W IC 12 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.05m 120 V A V(BR)CEO ICE=1mA 120 V V(BR)EBO IEB=0.05mA 7 V ICBO VCB=120V 50 A IEBO VEB=7V 50 A ICEO VEB=120V 1.0 A IC=5A VCEsat 1.8 IB=0.5A VCE

 0.3. Size:221K  foshan
 2sc2073a 3da2073a.pdf

 0.4. Size:254K  foshan
 2sc2654 3da2654.pdf

2SC2654(3DA2654) NPN /SILICON NPN TRANSISTOR Purpose For low-frequency power amplifiers and mid-speed switching. , 2SA1129(3CA1129) Features Large current capacity with small package, low collector saturation voltage, pair with 2SA1129(3CA1129). /Absolute

 0.5. Size:232K  foshan
 2sc2344 3da2344.pdf

2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SA1011(3CA1011) Features complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25 )

 0.6. Size:157K  foshan
 2sc2688 3da2688.pdf

2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output circuits. C ,f re T Features Low C , high f . re T /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25 )

 0.7. Size:175K  foshan
 2sc2275-a 3da2275-a.pdf

2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications. , 2SA985(3CA985)/2SA985A(3CA985A) Features Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25 )

 0.8. Size:339K  foshan
 2sc2611 3da2611.pdf

2SC2611(3DA2611) NPN /SILICON NPN TRANSISTOR , &[ ]Purpose High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W C T 150 j T -55 150

 0.9. Size:231K  foshan
 2sc2621 3da2621.pdf

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25 ) 1.2 W C P (Tc=25 ) 10 W C T 150

 0.10. Size:215K  foshan
 2sc2073 3da2073.pdf

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications, vertical output applications. , 2SA940(3CA940) Features Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25 )

 0.11. Size:32K  shaanxi
 3da14 3da27 3da28.pdf

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a

 0.12. Size:225K  inchange semiconductor
 3da27c.pdf

isc Silicon NPN Power Transistor 3DA27C DESCRIPTION With TO-3 High DC Current Gain- h >10@I = 1.5A FE C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta