3DA2 Datasheet. Specs and Replacement

Type Designator: 3DA2  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.75 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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3DA2 datasheet

 ..1. Size:32K  shaanxi

3da1 3da2 3da4.pdf pdf_icon

3DA2

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1. ... See More ⇒

 0.1. Size:108K  no

3da2983.pdf pdf_icon

3DA2

LJ2015-44 3DA2983 NPN T =25 1.0 A P W C T =25 15 c I 1.5 A C T 150 jm T -55 150 stg V I =1mA 160 V (BR)CBO CE 50 V I =10mA 160 V (BR)CEO CE 50 V I =1mA 5.0 V (BR)EBO EB I V =160V 1.0 A CBO CB I V =5V 1.0 A ... See More ⇒

 0.2. Size:109K  no

3da2522.pdf pdf_icon

3DA2

3DA2522 NPN PCM Ta=25 120 W IC 12 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.05m 120 V A V(BR)CEO ICE=1mA 120 V V(BR)EBO IEB=0.05mA 7 V ICBO VCB=120V 50 A IEBO VEB=7V 50 A ICEO VEB=120V 1.0 A IC=5A VCEsat 1.8 IB=0.5A VCE... See More ⇒

 0.3. Size:221K  foshan

2sc2073a 3da2073a.pdf pdf_icon

3DA2

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Detailed specifications: 3DA2344, 3DA340, 3DA3417, 3DA3420, 3DA3421, 3DA3422, 3DA3502, 3DA1, BC546, 3DA4, 3DA10A, 3DA10B, 3DA10C, 3DA10D, 3DA10E, 3DA10F, 3DA10G

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