3DA2 Specs and Replacement
Type Designator: 3DA2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 0.75
A
Max. Operating Junction Temperature (Tj): 175
°C
Electrical Characteristics
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO3
-
BJT ⓘ Cross-Reference Search
3DA2 datasheet
..1. Size:32K shaanxi
3da1 3da2 3da4.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1. ... See More ⇒
0.1. Size:108K no
3da2983.pdf 

LJ2015-44 3DA2983 NPN T =25 1.0 A P W C T =25 15 c I 1.5 A C T 150 jm T -55 150 stg V I =1mA 160 V (BR)CBO CE 50 V I =10mA 160 V (BR)CEO CE 50 V I =1mA 5.0 V (BR)EBO EB I V =160V 1.0 A CBO CB I V =5V 1.0 A ... See More ⇒
0.2. Size:109K no
3da2522.pdf 

3DA2522 NPN PCM Ta=25 120 W IC 12 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.05m 120 V A V(BR)CEO ICE=1mA 120 V V(BR)EBO IEB=0.05mA 7 V ICBO VCB=120V 50 A IEBO VEB=7V 50 A ICEO VEB=120V 1.0 A IC=5A VCEsat 1.8 IB=0.5A VCE... See More ⇒
0.4. Size:254K foshan
2sc2654 3da2654.pdf 

2SC2654(3DA2654) NPN /SILICON NPN TRANSISTOR Purpose For low-frequency power amplifiers and mid-speed switching. , 2SA1129(3CA1129) Features Large current capacity with small package, low collector saturation voltage, pair with 2SA1129(3CA1129). /Absolute ... See More ⇒
0.5. Size:232K foshan
2sc2344 3da2344.pdf 

2SC2344(3DA2344) NPN /SILICON NPN TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SA1011(3CA1011) Features complementary pair with 2SA1011(3CA1011). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
0.6. Size:157K foshan
2sc2688 3da2688.pdf 

2SC2688(3DA2688) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output circuits. C ,f re T Features Low C , high f . re T /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25 ) ... See More ⇒
0.7. Size:175K foshan
2sc2275-a 3da2275-a.pdf 

2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications. , 2SA985(3CA985)/2SA985A(3CA985A) Features Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25 ) ... See More ⇒
0.8. Size:339K foshan
2sc2611 3da2611.pdf 

2SC2611(3DA2611) NPN /SILICON NPN TRANSISTOR , &[ ]Purpose High voltage amplifier, TV video output. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W C T 150 j T -55 150 ... See More ⇒
0.9. Size:231K foshan
2sc2621 3da2621.pdf 

2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25 ) 1.2 W C P (Tc=25 ) 10 W C T 150 ... See More ⇒
0.10. Size:215K foshan
2sc2073 3da2073.pdf 

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications, vertical output applications. , 2SA940(3CA940) Features Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25 ) ... See More ⇒
0.11. Size:32K shaanxi
3da14 3da27 3da28.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA14, 3DA27, 3DA28 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for a... See More ⇒
0.12. Size:225K inchange semiconductor
3da27c.pdf 

isc Silicon NPN Power Transistor 3DA27C DESCRIPTION With TO-3 High DC Current Gain- h >10@I = 1.5A FE C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
Detailed specifications: 3DA2344
, 3DA340
, 3DA3417
, 3DA3420
, 3DA3421
, 3DA3422
, 3DA3502
, 3DA1
, BD335
, 3DA4
, 3DA10A
, 3DA10B
, 3DA10C
, 3DA10D
, 3DA10E
, 3DA10F
, 3DA10G
.
Keywords - 3DA2 pdf specs
3DA2 cross reference
3DA2 equivalent finder
3DA2 pdf lookup
3DA2 substitution
3DA2 replacement