2N6987U
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6987U
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: 20PIN-LEADLESS
2N6987U
Datasheet (PDF)
..1. Size:196K optek
2n6987u.pdf 
Product Bulletin JANTX, JANTXV, 2N6987USeptember 1996Surface Mount Quad PNP TransistorType JANTX, JANTXV, 2N6987UFeaturesAbsolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 VCeramic surface mount packageCollector-Base Voltage . . . . . . . . . . . . . .
..2. Size:50K microsemi
2n6987u 2n6988.pdf
TECHNICAL DATA MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices Qualified Level JAN 2N6987 JANTX 2N6988 2N6987U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (4) 60 Vdc VCEO 2N6987* Collector-Base Voltage (4) 60 Vdc VCBO TO- 116 Emitter-Base Voltage (4) 5.0 Vdc VEBO Collector C
8.1. Size:69K semicoa
2n6987.pdf
Data Sheet No. 2N6987Generic Part Number:Type 2N69872N6987Geometry 0600Polarity PNPREF: MIL-PRF-19500/558Qual Level: JAN - JANSFeatures: An array of four independent PNPsilicon switching transistors. Housed in a cerdip case. Also available in chip form usingthe 0600 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/558 whichSemicoa meet
9.1. Size:198K optek
2n6989u.pdf
Product Bulletin JANTX, JANTXV, 2N6989UJanuary 1996Surface Mount Quad NPN TransistorType JANTX, JANTXV, 2N6989UFeatures Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage . . . . . . . . . . . . . .
9.2. Size:11K semelab
2n698.pdf
2N698Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
9.3. Size:57K microsemi
2n6989-2n6990.pdf
TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) 50 Vdc VCEO Collector-Base Voltage (3) 75 Vdc TO- 116* VCBO Emitter-Base Voltage (3) 6.0 Vdc 2N6
9.4. Size:71K semicoa
2n6988.pdf
Data Sheet No. 2N6988Generic Part Number:Type 2N69882N6988Geometry 0600Polarity PNPREF: MIL-PRF-19500/558Qual Level: JAN - JANSFeatures: General purpose silicon transistorfor switching and amplifier applica-tions. Housed in a 14-Lead Flat Package. Also available in chip form using the0600 chip geometry. The Min and Max limits shown areper MIL-PRF-1950
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
